NTB75N03-06G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTB75N03-06G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Operating Temperature: 150 Cel; Avalanche Energy Rating (EAS): 1500 mJ;
Datasheet	NTB75N03-06G Datasheet
In Stock	2,023

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	75 A
Maximum Pulsed Drain Current (IDM):	225 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0065 ohm
Avalanche Energy Rating (EAS):	1500 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	75 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,023	-	-

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Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;