Image shown is a representation only.
| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NTH4L045N065SC1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 187 W; Maximum Drain-Source On Resistance: .05 ohm; Maximum Pulsed Drain Current (IDM): 197 A; |
| Datasheet | NTH4L045N065SC1 Datasheet |
| In Stock | 508 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON CARBIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 55 A |
| Maximum Pulsed Drain Current (IDM): | 197 A |
| Surface Mount: | NO |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 187 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain-Source On Resistance: | .05 ohm |
| Avalanche Energy Rating (EAS): | 72 mJ |
| Other Names: |
488-NTH4L045N065SC1 488-NTH4L045N065SC1DKRINACTIVE 488-NTH4L045N065SC1CT 488-NTH4L045N065SC1TR 488-NTH4L045N065SC1CTINACTIVE 5556-NTH4L045N065SC1 488-NTH4L045N065SC1TR-ND 488-NTH4L045N065SC1CT-ND 488-NTH4L045N065SC1DKRINACTIVE-ND 488-NTH4L045N065SC1-ND 488-NTH4L045N065SC1DKR 488-NTH4L045N065SC1CTINACTIVE-ND 488-NTH4L045N065SC1DKR-ND |
| Maximum Feedback Capacitance (Crss): | 14 pF |
| JEDEC-95 Code: | TO-247 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 650 V |









