Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
2SK4125-1E	Onsemi	N-CHANNEL	SINGLE	NO	170 W							1			17 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		17 A								e3
NTMYS2D9N04CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	68 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	740 A	215 mJ	110 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0028 ohm	110 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260	42 pF
FQA6N90C-F109	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	198 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	650 mJ	6.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					2.3 ohm	6 A	SINGLE	R-PSFM-T3			Not Qualified
NTP12N50	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	202 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A	720 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.5 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
NTMYS3D8N04CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	520 A	202 mJ	87 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.006 ohm	87 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260	21 pF
FCA20N60S-F109	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	450 mJ	20 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	370 ns	-55 Cel	550 ns		.26 ohm	20 A	SINGLE	R-PSFM-T3							NOT SPECIFIED	NOT SPECIFIED	85 pF
NTMYS3D3N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	811 A	180 mJ	133 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0042 ohm	26 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260
MTB9N25E	Onsemi	N-CHANNEL	SINGLE	YES	80 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		9 A								e0
MTD20P03HDL1	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.75 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	57 A	200 mJ	19 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.099 ohm	19 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED		e0
NTB45N06LT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	240 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.028 ohm	45 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
MTD1N80E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	20 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	12 ohm	1 A	SINGLE	R-PSSO-G2			Not Qualified			e0		235
FW808	Onsemi	N-CHANNEL		YES	2.5 W						ENHANCEMENT MODE				8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							8 A
ATP404-TL-H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	380 A	214 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.0105 ohm	95 A	SINGLE	R-PSSO-G2		DRAIN
NTQD6968	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.94 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	150 mJ	5.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.022 ohm	6.6 A	DUAL	R-PDSO-G8			Not Qualified			e0
MGSF2N02ELT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5 A		2.8 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.085 ohm	2.8 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3		260
NTD60N02RG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		60 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0105 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NVB25P06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	600 mJ	27.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.082 ohm	27.5 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NDD03N40ZT4G	Onsemi																									TIN					3					e3	30	260
2SK4066-DL-1E	Onsemi	N-CHANNEL	SINGLE	YES	90 W							1			100 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		100 A			1					e3
MTP8N50E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	510 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN LEAD	.8 ohm	8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
FC19	Onsemi	N-CHANNEL		YES	.2 W						ENHANCEMENT MODE				.01 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR									.01 A
FDU8874	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		240 mJ	116 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	156 ns	-55 Cel	126 ns		.0064 ohm	18 A	SINGLE	R-PSIP-T3					TO-251AA		NOT SPECIFIED	NOT SPECIFIED
MCH6431-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W							1			5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		5 A			1					e6	30	260
FQP5N50C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	73 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	300 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.4 ohm	5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
NTMJS0D8N04CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	180 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	900 A	1286 mJ	368 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.00115 ohm	368 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260	119 pF
2SK4123LS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	66 A	412 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	.34 ohm	18 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-220AB
SCH2812	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel							1.4 A
FDI038AN06A0	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		625 mJ	17 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	175 ns	-55 Cel	115 ns	MATTE TIN	.0038 ohm	17 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AB	e3
NTD6600N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	72 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn)	.146 ohm	12 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3	40	260
NDF05N50ZG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	3.5 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	1.5 ohm	5.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
ATP201-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	30 W							1			35 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		35 A			1					e6
STTFS015N10MCL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	130 A	54 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0129 ohm	42 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	9 pF
MTP3055V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	48 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	37 A	72 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin/Lead (Sn/Pb)	.15 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0	30	235
MCH6437	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							7 A
NVD3055-150T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	28.8 W	175 Cel	SILICON	105 ns	-55 Cel	75 ns	MATTE TIN	.15 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	40 pF	AEC-Q101
MMSF7P03HDR2	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	5000 mJ	7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.035 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e0	30	235
FX611	Onsemi	N-CHANNEL	SINGLE	NO	1.5 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR									2 A
NTH4L050N065SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	338 W	PLASTIC/EPOXY		650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	391 A		62.6 A	4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE		-55 Cel				62.6 A	SINGLE	R-PSFM-T4					TO-247				14.42 pF
MVB50P03HDLT4G	Onsemi																									TIN					1					e3	30	260
FCH47N60N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	368 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	141 A	3068 mJ	47 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.062 ohm	47 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3
NTLJD3115PTAG	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	20 A		3.3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Tin (Sn)	.135 ohm	2.3 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260
MTD1302	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	200 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.022 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
CPH3453-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1			.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		.3 A			1					e6
NTP4804NG	Onsemi	N-CHANNEL	SINGLE	NO	120 W						ENHANCEMENT MODE	1			133 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							133 A
NXH40B120MNQ0SNG	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	118 W	UNSPECIFIED	SWITCHING	1200 V	PIN/PEG	RECTANGULAR	DEPLETION MODE	2	114 A		38 A	22	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON CARBIDE		-40 Cel		Matte Tin (Sn) - annealed	.055 ohm	38 A	UPPER	R-XUFM-P22		ISOLATED				e3			19 pF
NDTL01N60ZT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.4 A	12 mJ	.25 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	15 ohm	.25 A	DUAL	R-PDSO-G4	1	DRAIN			TO-261AA	e3	30	260	3 pF
NTP75N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	214 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	225 A	844 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.011 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
FX206	Onsemi	N-CHANNEL	SINGLE	NO	2 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR									4 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.