NTH4L050N065SC1 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTH4L050N065SC1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 338 W; Maximum Drain Current (Abs) (ID): 62.6 A; Maximum Operating Temperature: 175 Cel;
Datasheet	NTH4L050N065SC1 Datasheet
In Stock	1,440

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	14.42 pF
Maximum Drain Current (ID):	62.6 A
JEDEC-95 Code:	TO-247
Maximum Pulsed Drain Current (IDM):	391 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	4
Minimum DS Breakdown Voltage:	650 V
Maximum Power Dissipation (Abs):	338 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain Current (Abs) (ID):	62.6 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,440	-	-

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