Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
MCH6342-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			4.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		4.5 A			1					e6
EMH2407-TL-H	Onsemi																								TIN BISMUTH					1					e6	30	260
NTB90N02G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	85 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0058 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NVIS1D9N04CTXX	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	117 W	PLASTIC/EPOXY		40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	900 A	420 mJ	180 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0019 ohm	180 A	SINGLE	R-PSIP-T3					TO-262AA		NOT SPECIFIED	NOT SPECIFIED	71 pF	AEC-Q101
NTB35N15	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	178 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	111 A	700 mJ	37 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.05 ohm	37 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
MMDF2C03HDR2G	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	21 A	324 mJ	4.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.07 ohm	4.1 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	40	260
MTD2955VT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	42 A	216 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin (Sn)	.23 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	40	260
NTPF150N65S3HF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	275 mJ	24 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.15 ohm	24 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
FCP260N60E	Onsemi	N-CHANNEL	SINGLE	NO	156 W							1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Matte Tin (Sn) - annealed		15 A								e3	NOT SPECIFIED	NOT SPECIFIED
5HN01S	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1			.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.1 A
2SK4065-DL-E	Onsemi	N-CHANNEL	SINGLE	YES	90 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Bismuth (Sn/Bi)		100 A			1					e6
NTMKE4894NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	250 A	577 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		SILICON					.0024 ohm	33 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
FQU5N50CTU-WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	48 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	300 mJ	4 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	135 ns	-55 Cel	215 ns	MATTE TIN	1.4 ohm	4 A	SINGLE	R-PSIP-T3						e3			20 pF
FQI12P20	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	46 A	810 mJ	11.5 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	450 ns	-55 Cel	220 ns		.47 ohm	11.5 A	SINGLE	R-PSIP-T3							NOT SPECIFIED	NOT SPECIFIED	40 pF
FDU6612A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	36 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	51 mJ	30 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	28 ns	-55 Cel	46 ns		.02 ohm	21 A	SINGLE	R-PSIP-T3					TO-251AA
FDWS5360L-F085	Onsemi																													1						30	260
MTB75N06HDT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	500 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.01 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE ENERGY RATED		e0		235
ATP213-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	50 W							1			50 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		50 A			1					e6
FQB9N50C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	360 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.8 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified
MMDF2N02E	Onsemi	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				3.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							3.6 A
VEC2408	Onsemi	N-CHANNEL		YES	1 W						ENHANCEMENT MODE				3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							3.5 A
FQI8N60C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	230 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					1.2 ohm	7.5 A	SINGLE	R-PSIP-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
NTD85N02R-001	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2.4 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	192 A	85 mJ	32 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0052 ohm	85 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0		235
MTV16N50E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	860 mJ	16 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn/Pb)	.4 ohm	16 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e0
MMDF2C01HDR2	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	48 A		5.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.045 ohm	5.2 A	DUAL	R-PDSO-G8			Not Qualified			e0		235
NIF9N05ACLT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.69 W	PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	110 mJ	2.6 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.125 ohm	2.6 A	DUAL	R-PDSO-G4		DRAIN		LOGIC LEVEL COMPATIBLE	TO-261AA	e3
NTH4LN095N65S3H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	284 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.095 ohm	30 A	SINGLE	R-PSFM-T4					TO-247		NOT SPECIFIED	NOT SPECIFIED
NTLMS4403N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	UNSPECIFIED	SWITCHING	24 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	56 A	220 mJ	16 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0064 ohm	16 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified			e0
EC4405C	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1			.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.3 A
NTLTD7900ZR2	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	3.2 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	30 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.026 ohm	6 A	DUAL	R-XDSO-N8		DRAIN	Not Qualified	ESD PROTECTED		e0		235
MTW14N50E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	860 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.4 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	HIGH VOLTAGE	TO-247AE	e0	30	235
FQA55N25	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	220 A	1000 mJ	55 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.04 ohm	55 A	SINGLE	R-PSFM-T3			Not Qualified			e3
MTW8N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	864 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.55 ohm	8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AE	e0		235
FTD2014	Onsemi	N-CHANNEL		YES	.8 W						ENHANCEMENT MODE				4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							4 A
NTB30N06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	101 mJ	27 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.042 ohm	27 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
MCH6341-TL-W	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Bismuth (Sn/Bi)		5 A			1					e6	30	260
NTD78N03	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	722.5 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD	.006 ohm	11.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
FQB7N60TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.13 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	29.6 A	580 mJ	7.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1 ohm	7.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
NTB45N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	240 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.026 ohm	45 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
MCH6654	Onsemi	N-CHANNEL		YES	.6 W						DEPLETION MODE				.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.2 A
NTD60N02R-032	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		60 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.0105 ohm	32 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
SCH2409	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1			.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.3 A
MTB52N06V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	165 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	182 A	406 mJ	52 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.022 ohm	52 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
NDP05N50ZG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					1.5 ohm	5.5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
FDU6296	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	165 mJ	50 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	30 ns	-55 Cel	69 ns		.0088 ohm	21 A	SINGLE	R-PSIP-T3					TO-251AA
NTP35N15G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	178 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	111 A	700 mJ	37 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.05 ohm	37 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3		260
NTD60N03T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	28 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	733 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0075 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
MTW45N10E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	135 A	810 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn/Pb)	.035 ohm	45 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AE	e0	30	235

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.