Onsemi - FQI12P20

FQI12P20 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FQI12P20
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Turn Off Time (toff): 220 ns; Minimum Operating Temperature: -55 Cel;
Datasheet FQI12P20 Datasheet
In Stock1,902
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 450 ns
Maximum Drain Current (ID): 11.5 A
Maximum Pulsed Drain Current (IDM): 46 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 120 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
Maximum Turn Off Time (toff): 220 ns
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .47 ohm
Avalanche Energy Rating (EAS): 810 mJ
Maximum Feedback Capacitance (Crss): 40 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 200 V
Maximum Drain Current (Abs) (ID): 11.5 A
Peak Reflow Temperature (C): NOT SPECIFIED
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