Onsemi - FTD2014

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FTD2014 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FTD2014
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain Current (Abs) (ID): 4 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
Datasheet FTD2014 Datasheet
In Stock2,141
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .8 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 4 A
Maximum Drain Current (Abs) (ID): 4 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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