Onsemi - NTLTD7900ZR2

NTLTD7900ZR2 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NTLTD7900ZR2
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.2 W; Operating Mode: ENHANCEMENT MODE; Additional Features: ESD PROTECTED;
Datasheet NTLTD7900ZR2 Datasheet
In Stock1,814
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 30 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 8
Maximum Power Dissipation (Abs): 3.2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-N8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .026 ohm
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Additional Features: ESD PROTECTED
Maximum Drain Current (Abs) (ID): 6 A
Peak Reflow Temperature (C): 235
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,814 $0.163 $295.682

Popular Products

Category Top Products