Onsemi - ATP213-TL-H

  1. Home
  2. Onsemi - ATP213-TL-H
ATP213-TL-H by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number ATP213-TL-H
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; JESD-609 Code: e6; Maximum Drain Current (Abs) (ID): 50 A;
Datasheet ATP213-TL-H Datasheet
In Stock503
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 50 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
Maximum Power Dissipation (Abs): 50 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 50 A
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
503 - -

Popular Products

Category Top Products

BSC320N20NS3G by Infineon Technologies

BSC320N20NS3G

Infineon Technologies

BSC320N20NS3G by Infineon Technologies is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. It has a max IDM of 144A and EAS of 190mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it features 0.032 ohm Drain-Source On Resistance and can handle up to 125W power dissipation.
BSZ097N04LSGATMA1 by Infineon Technologies

BSZ097N04LSGATMA1

Infineon Technologies

Infineon BSZ097N04LSGATMA1 is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for SWITCHING applications. Features include 160A IDM, 0.0142 ohm RDS(on), and 20mJ EAS rating. Operates in ENHANCEMENT MODE up to 175°C, with PLASTIC/EPOXY package and DUAL terminal position.
SI4946BEY-T1-E3 by Vishay Siliconix

SI4946BEY-T1-E3

Vishay Siliconix

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Maximum Drain-Source On Resistance: .041 ohm; JESD-30 Code: R-PDSO-G8;
BUK9M85-60EX by Nexperia

BUK9M85-60EX

Nexperia

BUK9M85-60EX by Nexperia is a N-channel power FET with 60V DS breakdown voltage and 12.8A max drain current. Ideal for switching applications, it features a built-in diode, 0.085 ohm max on resistance, and 51A pulsed drain current. Suitable for surface mount with Gull Wing terminals in a small outline package style.
SPW47N60C3FKSA1 by Infineon Technologies

SPW47N60C3FKSA1

Infineon Technologies

SPW47N60C3FKSA1 by Infineon is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a single configuration with built-in diode, 47A max drain current, and 0.07 ohm max on-resistance. Ideal for high-power applications requiring efficient switching and high current handling capabilities.
2N7002 by Sinyork

2N7002

Sinyork

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
SI4532DY by Onsemi

SI4532DY

Onsemi

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Pulsed Drain Current (IDM): 20 A; Package Body Material: PLASTIC/EPOXY;
STP11NK50ZFP by STMicroelectronics

STP11NK50ZFP

STMicroelectronics

STP11NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 40A IDM, and 0.52 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation, 190mJ EAS rating, and ENHANCEMENT MODE operation at up to 150°C.
BS170 by Telcom Semiconductor

BS170

Telcom Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Maximum Drain Current (ID): .5 A;
2N7002PS,115 by NXP Semiconductors

2N7002PS,115

NXP Semiconductors

2N7002PS,115 by NXP Semiconductors is an N-CHANNEL Power FET with 0.32A Max Drain Current and 0.99W Power Dissipation. It operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 150 °C. Ideal for applications requiring high power efficiency in compact designs.
IRF530A by Motorola

IRF530A

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified; Maximum Power Dissipation Ambient: 75 W;
AUIRFZ44N by Infineon Technologies

AUIRFZ44N

Infineon Technologies

AUIRFZ44N by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 55V and can handle a max pulsed drain current of 160A. This transistor is commonly used for switching applications.
JANTX2N6796 by Harris Semiconductor

JANTX2N6796

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: WIRE; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
IRFZ44NS by International Rectifier

IRFZ44NS

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; No. of Elements: 1; Package Shape: RECTANGULAR;
NVMFS5C604NLAFT1G by Onsemi

NVMFS5C604NLAFT1G

Onsemi

NVMFS5C604NLAFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
AUIRF3205Z by Infineon Technologies

AUIRF3205Z

Infineon Technologies

AUIRF3205Z by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 440A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0065 ohm RDS(on), and 170W Pdiss. Operating in ENHANCEMENT MODE, it has a max temp of 175°C and EAS of 250mJ.
IRF7493TRPBF-1 by International Rectifier

IRF7493TRPBF-1

International Rectifier

Power Field-Effect Transistors;
IRLML5203TRPBF by International Rectifier

IRLML5203TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
CSD18504Q5AT by Texas Instruments

CSD18504Q5AT

Texas Instruments

CSD18504Q5AT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 275A IDM, and 0.0098 ohm Drain-Source Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 150°C and -55°C min temp.
IRFP4468PBF by International Rectifier

IRFP4468PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Transistor Application: SWITCHING; JESD-609 Code: e3;