Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
CPH5819	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel					1.4 A
NTP90N02	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	85 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	90 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.0058 ohm	90 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
FDA16N50LDTU	Onsemi	N-CHANNEL	SINGLE	NO	205 W							1			16.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			MATTE TIN		16.5 A								e3
NTD78N03G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	722.5 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.006 ohm	11.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
SCH1419	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.5 A
NTMJS1D4N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	180 W	PLASTIC/EPOXY		60 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	900 A	1376 mJ	262 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.0018 ohm	262 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	57 pF
FDU6N50TU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	89 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	270 mJ	6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.9 ohm	6 A	SINGLE	R-PSIP-T3			Not Qualified			e3
MMDF2C02ER2	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A	245 mJ	3.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.1 ohm	3.6 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
NTHC5513T1	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	10 A		2.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.08 ohm	3.1 A	DUAL	R-XDSO-C8	1		Not Qualified			e0		235
NTC050N065SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	325 W	UNSPECIFIED		650 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	373 A		61.5 A	3	UNCASED CHIP		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE	-55 Cel			61.5 A	UNSPECIFIED	R-XXUC-N3									14.43 pF
MTD20P06HDLG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	72 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	300 mJ	15 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.175 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
NTD60N02R-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	48 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		60 mJ	32 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.0105 ohm	32 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
NDUL03N150CG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		1500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5 A	34 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON		MATTE TIN	10.5 ohm	2.5 A	SINGLE	R-PSFM-T3						e3
NVTYS9D6P04M8LTWG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY		40 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	290 A		76 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.0096 ohm	76 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	47 pF	AEC-Q101
NTP6448ANG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	188 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	305 A	500 mJ	76 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.013 ohm	76 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
MCH6438	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						ENHANCEMENT MODE	1			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					.2 A
CPH5863	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel					2.5 A
FDI030N06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	231 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	772 A	1434 mJ	193 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.0032 ohm	120 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3	NOT SPECIFIED	NOT SPECIFIED
NTD78N03-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	722.5 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.006 ohm	11.4 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3		260
MCH6421	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			5.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					5.5 A
BFL4004	Onsemi	N-CHANNEL	SINGLE	NO	36 W						ENHANCEMENT MODE	1			4.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)		4.3 A
SCH1412	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.4 A
NTLTD7900NR2G	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	30 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.026 ohm	6 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3		260
FDU8778_F071	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	145 A	24 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.014 ohm	35 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251AA		NOT SPECIFIED	NOT SPECIFIED
NDD02N40T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY		400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.9 A	120 mJ	1.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0055 ohm	1.7 A	SINGLE	R-PSSO-G2	3	DRAIN				e3	30	260
NTD15N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.1 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
EFC4615R-TR	Onsemi																						TIN SILVER COPPER					1					e1	30	260
SCH1404	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2.5 A
NTP85N03G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	85 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0068 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3		260
NTP4302G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	175 A	722 mJ	74 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0093 ohm	74 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3		260
BMS4003	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	53 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON			.065 ohm	18 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB
FW513TL	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						DEPLETION MODE	1			.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					.35 A
NTHD3101FT1	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	13 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN LEAD	.08 ohm	3.2 A	DUAL	R-XDSO-C8	1		Not Qualified			e0		235
MTB60N05HD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	540 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.014 ohm	60 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
FDB9506L-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	176 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1260 A	370 mJ	110 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0036 ohm	110 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245	140 pF	AEC-Q101
MTW35N15E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	105 A	600 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.05 ohm	35 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AE	e0		235
MCH6436	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					6 A
NDD03N60Z	Onsemi
NTD6N40-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	180 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			1.1 ohm	6 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK4066(SMP-FD)	Onsemi	N-CHANNEL	SINGLE	YES	90 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					100 A
MTB50N06VL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	147 A	265 mJ	42 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.032 ohm	42 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
MCH6421-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W							1			5.5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH		5.5 A			1					e6	30	260
EMH1307-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			6.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH		6.5 A			1					e6
NTMYS2D2N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	134 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	900 A	941 mJ	31 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.0026 ohm	31 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260	25 pF
NTD80N02T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0058 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
FW905	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	DEPLETION MODE	2	52 A		7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.024 ohm	7 A	DUAL	R-PDSO-G8			Not Qualified
MCH6336-TL-E	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Bismuth (Sn/Bi)		5 A			1					e6
MTB40N10E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	169 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	800 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.04 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.