Onsemi Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTLJF3117PTAG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	20 A		3.3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.135 ohm	2.3 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified			e3		260
2SK4192LS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	161 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON				Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	1.04 ohm	7 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-220AB	e2
NTPF165N65S3H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	53 A	163 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.165 ohm	19 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
NVTYS010N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		60 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	290 A	88 mJ	13 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.015 ohm	13 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	11 pF	AEC-Q101
NTQD6968R2	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.94 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	150 mJ	5.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.022 ohm	6.6 A	DUAL	R-PDSO-G8	1		Not Qualified			e0		235
FSS218	Onsemi	N-CHANNEL	SINGLE	YES	1.8 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							8 A
NTMSD6N303R2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	325 mJ	6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.032 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified			e0		235
NDF60N550U1G	Onsemi	N-CHANNEL	SINGLE	NO	28 W							1			9.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							9.5 A									NOT SPECIFIED	NOT SPECIFIED
FW216A-TL-2W	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		35 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				Tin (Sn)	.064 ohm	4.5 A	DUAL	R-PDSO-G8	1					e3
NDB6060L86Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	144 A	200 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.025 ohm	48 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB
NDD60N360U1-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	114 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	64 mJ	11 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.36 ohm	11 A	SINGLE	R-PSIP-T3	3	DRAIN				e3	30	260
MTP6N100E	Onsemi	N-CHANNEL	SINGLE	YES	178 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							6 A
FW274-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Bismuth (Sn/Bi)		6 A			1					e6
SFT1431(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	15 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							11 A
MTB23P06V	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	81 A	794 mJ	23 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN LEAD	.12 ohm	23 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
ATP405-TL-H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	148 mJ	40 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN BISMUTH	.033 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260	170 pF
EFC4K105NUZTDG	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	2.5 W	UNSPECIFIED	SWITCHING		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2				10	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON							BOTTOM	R-XBCC-N10		SOURCE					NOT SPECIFIED	NOT SPECIFIED
NVB60N06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	454 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.014 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NTB85N03G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	85 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0068 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
FCP850N80Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	114 mJ	8 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	72 ns	-55 Cel	109 ns	Matte Tin (Sn) - annealed	.85 ohm	8 A	SINGLE	R-PSFM-T3					TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
NDP06N62ZG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	113 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					1.2 ohm	6 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
EFC4601R	Onsemi	N-CHANNEL		YES	1.6 W						DEPLETION MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel
NTMS4920NR2G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.12 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	136 A	162 mJ	17 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0043 ohm	10.6 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	40	260	41 pF
EFC4612R	Onsemi	N-CHANNEL		YES	1.6 W						DEPLETION MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel
MTD9N10E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	40 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Tin/Lead (Sn/Pb)	.25 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e0	30	235
NVTYS007N04CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		40 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	214 A	72 mJ	51 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.012 ohm	14 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260		AEC-Q101
NVMJS0D8N04CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	180 W	PLASTIC/EPOXY		40 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	900 A	1286 mJ	368 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.00115 ohm	368 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	119 pF	AEC-Q101
NTD18N06L-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.065 ohm	18 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0
MTB3N120E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A	101 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	5 ohm	3 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e0	30	235
NTD110N02R-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	92.5 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	120 mJ	32 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0062 ohm	32 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
MTB60N06HD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	540 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.014 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
NTMD7C02R2	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2				8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD	.024 ohm	7 A	DUAL	R-PDSO-G8			Not Qualified			e0
MMSF3P02HD	Onsemi	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			5.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							5.6 A
ATP602-TL-H	Onsemi																								Tin/Bismuth (Sn/Bi)					1					e6
NTY100N10G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	313 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	369 A	500 mJ	123 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.01 ohm	123 A	SINGLE	R-PSIP-T3			Not Qualified		TO-264AA	e3		260
NTD14N03R-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20.8 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		11.4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.13 ohm	11.4 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NVBG060N090SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	211 W	PLASTIC/EPOXY	SWITCHING	900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	176 A	162 mJ	44 A	7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	106 ns	-55 Cel	94 ns	Matte Tin (Sn) - annealed	.084 ohm	44 A	SINGLE	R-PSSO-G7	1	DRAIN		AVALANCHE RATED		e3	30	245		AEC-Q101
FDU5N60NZTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	216 mJ	4 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	90 ns	-55 Cel	130 ns	Matte Tin (Sn) - annealed	2 ohm	4 A	SINGLE	R-PSIP-T3					TO-251AA	e3			7.5 pF
MLP1N06CLG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR	NO	30 W	PLASTIC/EPOXY	SWITCHING	59 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1.8 A	80 mJ	2.75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.75 ohm	2.75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3		260
2SK4125	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	86.5 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON				Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	.61 ohm	17 A	SINGLE	R-PSFM-T3			Not Qualified	HIGH RELIABILITY
MCH6440	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.6 A
CPH5614	Onsemi	N-CHANNEL		YES	.9 W						ENHANCEMENT MODE				1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							1 A
FCA20N60S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	450 mJ	20 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	370 ns	-55 Cel	550 ns		.26 ohm	20 A	SINGLE	R-PSFM-T3									85 pF
MTP75N05HD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	225 A	500 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0095 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
NTB30N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	101 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin (Sn)	.046 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	40	260
SCH2602	Onsemi	N-CHANNEL		YES	.6 W						ENHANCEMENT MODE				1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							1.5 A
BFL4007-1E	Onsemi	N-CHANNEL	SINGLE	NO	40 W							1			8.7 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		8.7 A								e3
NTD70N03R-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.56 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	71.7 mJ	62.8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.013 ohm	32 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3		260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.