NTL4502NT1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTL4502NT1G
Description	N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .013 ohm;
Datasheet	NTL4502NT1G Datasheet
In Stock	1,324

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	80 mJ
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	11.4 A
Maximum Pulsed Drain Current (IDM):	32 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	16
Minimum DS Breakdown Voltage:	24 V
Qualification:	Not Qualified
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	S-XQCC-N16
No. of Elements:	4
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.013 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,324	-	-

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