Onsemi - MCH6448-TL-H

  1. Home
  2. Onsemi - MCH6448-TL-H
MCH6448-TL-H by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number MCH6448-TL-H
Description Power Field-Effect Transistors; Terminal Finish: TIN BISMUTH; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
Datasheet MCH6448-TL-H Datasheet
In Stock1,728
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Peak Reflow Temperature (C): 260
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,728 $0.252 $435.456

Popular Products

Category Top Products

SI7149ADP-T1-GE3 by Vishay Intertechnology

SI7149ADP-T1-GE3

Vishay Intertechnology

SI7149ADP-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, 300A IDM, and 0.0052 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is SMALL OUTLINE with DUAL terminals and DRAIN case connection.
IRF840PBF by International Rectifier

IRF840PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE;
IRLR2908TRPBF by International Rectifier

IRLR2908TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 30 A;
BSC060N10NS3GATMA1/SAMPLE by Infineon Technologies

BSC060N10NS3GATMA1/SAMPLE

Infineon Technologies

BSC060N10NS3GATMA1/SAMPLE by Infineon is a N-CHANNEL FET with PLASTIC/EPOXY package, ideal for SWITCHING applications. It features SINGLE configuration with built-in DIODE and METAL-OXIDE SEMICONDUCTOR technology. This 8-terminal transistor has RECTANGULAR shape, DUAL position terminals, and DRAIN case connection for surface mount use.
PSMN4R8-100BSE by Nexperia

PSMN4R8-100BSE

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 405 W; Terminal Position: SINGLE; Peak Reflow Temperature (C): 260;
SIR873DP-T1-GE3 by Vishay Intertechnology

SIR873DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIR873DP-T1-GE3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 50A and EAS of 80mJ, this MOSFET has 0.0475 ohm Drain-Source On Resistance. Its small outline package and matte tin finish make it suitable for various electronic designs.
IRF9640STRLPBF by Vishay Siliconix

IRF9640STRLPBF

Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .5 ohm; Operating Mode: ENHANCEMENT MODE;
FQB34P10TM by Fairchild Semiconductor

FQB34P10TM

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 155 W; Maximum Pulsed Drain Current (IDM): 134 A; Maximum Drain-Source On Resistance: .06 ohm;
IRF9540PBF by International Rectifier

IRF9540PBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (ID): 19 A;
SQM120P10-10M1L_GE3 by Vishay Intertechnology

SQM120P10-10M1L_GE3

Vishay Intertechnology

Vishay Intertechnology's SQM120P10-10M1L_GE3 is a P-channel FET with 100V DS breakdown voltage, 480A IDM, and 0.0101 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRF7759L2TRPBF by International Rectifier

IRF7759L2TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Shape: RECTANGULAR; No. of Elements: 1;
SQJ409EP-T1_GE3 by Vishay Intertechnology

SQJ409EP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ409EP-T1_GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 150A IDM, and 0.007 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
FQD16N25CTM by Fairchild Semiconductor

FQD16N25CTM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 160 W; Avalanche Energy Rating (EAS): 432 mJ; Moisture Sensitivity Level (MSL): 1;
IRFZ44NSTRL by International Rectifier Hirel Products

IRFZ44NSTRL

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Qualification: Not Qualified; Package Shape: RECTANGULAR;
IRLML2502TRPBF by Infineon Technologies

IRLML2502TRPBF

Infineon Technologies

IRLML2502TRPBF by Infineon Technologies is a N-CHANNEL power FET with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 4.2A.
FDB2710 by Onsemi

FDB2710

Onsemi

FDB2710 by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage, 50A Drain Current, and 0.0425 ohm On Resistance. Ideal for power management applications due to its 260W Power Dissipation, ENHANCEMENT MODE operation, and built-in DIODE configuration.
BSC190N15NS3GATMA1 by Infineon Technologies

BSC190N15NS3GATMA1

Infineon Technologies

Infineon BSC190N15NS3GATMA1 is a N-CHANNEL FET with 150V DS breakdown voltage, ideal for switching applications. Features include 200A IDM, 170mJ EAS, and 0.019 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 125W in a small outline package.
FDS4559_NL by Fairchild Semiconductor

FDS4559_NL

Fairchild Semiconductor

FDS4559_NL by Fairchild Semiconductor is a Power FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 4.5A, on-resistance of 0.055 ohm, and operates at up to 175°C. Package: PLASTIC/EPOXY, GULL WING terminals in SMALL OUTLINE style.
IRLML2244TRPBF by International Rectifier

IRLML2244TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
IRF640NLPBF by International Rectifier

IRF640NLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Pulsed Drain Current (IDM): 72 A; JEDEC-95 Code: TO-262AA;