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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NIB6404-5L |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .02 ohm; |
| Datasheet | NIB6404-5L Datasheet |
| In Stock | 280 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 52 A |
| Maximum Pulsed Drain Current (IDM): | 200 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 115 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain-Source On Resistance: | .02 ohm |
| Avalanche Energy Rating (EAS): | 450 mJ |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum DS Breakdown Voltage: | 40 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 52 A |
| Peak Reflow Temperature (C): | 235 |
