MMDF4P03HDR2G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MMDF4P03HDR2G
Description	P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Additional Features: LOGIC LEVEL COMPATIBLE; JESD-30 Code: R-PDSO-G8;
Datasheet	MMDF4P03HDR2G Datasheet
In Stock	849

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	450 mJ
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4 A
Maximum Pulsed Drain Current (IDM):	20 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.085 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
849	-	-

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