NTHD3101FT1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTHD3101FT1G
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Terminal Position: DUAL; Maximum Pulsed Drain Current (IDM): 13 A;
Datasheet	NTHD3101FT1G Datasheet
In Stock	1,485

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3.2 A
Maximum Pulsed Drain Current (IDM):	13 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	1.1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-XDSO-C8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	C BEND
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.08 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	2156-NTHD3101FT1G-OS NTHD3101FT1GOSTR NTHD3101FT1GOSDKR NTHD3101FT1GOSCT ONSONSNTHD3101FT1G
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	3.2 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,485	$0.476	$706.860

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