NTP7D3N15MC by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTP7D3N15MC
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Avalanche Energy Rating (EAS): 600 mJ; Operating Mode: ENHANCEMENT MODE;
Datasheet	NTP7D3N15MC Datasheet
In Stock	1,172

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	12.1 A
Maximum Pulsed Drain Current (IDM):	574 A
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	166 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0073 ohm
Avalanche Energy Rating (EAS):	600 mJ
Maximum Feedback Capacitance (Crss):	15 pF
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	150 V
Maximum Drain Current (Abs) (ID):	101 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,172	$2.200	$2,578.400

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