Onsemi - EFC2K102NUZTDG

EFC2K102NUZTDG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number EFC2K102NUZTDG
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): CHIP CARRIER;
Datasheet EFC2K102NUZTDG Datasheet
In Stock2,471
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 10
Maximum Power Dissipation (Abs): 3.1 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N10
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
2,471 $0.388 $958.748

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