Onsemi - NDD02N40-1G

NDD02N40-1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NDD02N40-1G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 39 W; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE;
Datasheet NDD02N40-1G Datasheet
In Stock1,417
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.7 A
Maximum Pulsed Drain Current (IDM): 6.9 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 39 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0055 ohm
Moisture Sensitivity Level (MSL): 3
Avalanche Energy Rating (EAS): 120 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 400 V
Maximum Drain Current (Abs) (ID): 1.7 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,417 $0.110 $155.870

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