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Manufacturer | Onsemi |
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Manufacturer's Part Number | PCFA86062F |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 429 W; No. of Terminals: 3; Maximum Drain Current (ID): 315.7 A; |
Datasheet | PCFA86062F Datasheet |
In Stock | 1,923 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 352 mJ |
Package Body Material: | UNSPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Feedback Capacitance (Crss): | 29 pF |
Maximum Drain Current (ID): | 315.7 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Minimum Operating Temperature: | -55 Cel |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 100 V |
Maximum Power Dissipation (Abs): | 429 W |
Terminal Position: | UPPER |
Package Style (Meter): | UNCASED CHIP |
JESD-30 Code: | R-XUUC-N3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Reference Standard: | AEC-Q101 |
Maximum Drain-Source On Resistance: | .002 ohm |