Onsemi - PCFA86062F

PCFA86062F by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number PCFA86062F
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 429 W; No. of Terminals: 3; Maximum Drain Current (ID): 315.7 A;
Datasheet PCFA86062F Datasheet
In Stock1,923
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 352 mJ
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 29 pF
Maximum Drain Current (ID): 315.7 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 3
Minimum DS Breakdown Voltage: 100 V
Maximum Power Dissipation (Abs): 429 W
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Reference Standard: AEC-Q101
Maximum Drain-Source On Resistance: .002 ohm
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