Onsemi - NTL4502NT1

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NTL4502NT1 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTL4502NT1
Description N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 4; No. of Terminals: 16; Maximum Drain Current (ID): 11.4 A;
Datasheet NTL4502NT1 Datasheet
In Stock1,652
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11.4 A
Maximum Pulsed Drain Current (IDM): 32 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 16
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-XQCC-N16
No. of Elements: 4
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .013 ohm
Avalanche Energy Rating (EAS): 80 mJ
Other Names: 2156-NTL4502NT1-ONTR-ND
2156-NTL4502NT1
ONSONSNTL4502NT1
NTL4502NT1OS
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 24 V
Qualification: Not Qualified
Peak Reflow Temperature (C): 235
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