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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NILMS4501NR2G |
| Description | N-CHANNEL; Configuration: CURRENT MIRROR WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Maximum Operating Temperature: 175 Cel; Terminal Form: NO LEAD; |
| Datasheet | NILMS4501NR2G Datasheet |
| In Stock | 602 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | CURRENT MIRROR WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 9.5 A |
| Maximum Pulsed Drain Current (IDM): | 14 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 2.7 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-PBCC-N4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .016 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 50 mJ |
| Other Names: |
NILMS4501NR2GOSTR NILMS4501NR2GOSCT NILMS4501NR2G-ND =NILMS4501NR2GOSCT-ND |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 24 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 9.5 A |
| Peak Reflow Temperature (C): | 260 |
