FDA15N65 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FDA15N65
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Package Body Material: UNSPECIFIED; Maximum Pulsed Drain Current (IDM): 64 A;
Datasheet	FDA15N65 Datasheet
In Stock	1,599

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	16 A
Maximum Pulsed Drain Current (IDM):	64 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	260 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.44 ohm
Avalanche Energy Rating (EAS):	637 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	650 V
Qualification:	Not Qualified
Additional Features:	FAST SWITCHING
Maximum Drain Current (Abs) (ID):	16 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,599	$1.330	$2,126.670

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