SVC6H890N-DIE by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	SVC6H890N-DIE
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 1; Terminal Position: UPPER;
Datasheet	SVC6H890N-DIE Datasheet
In Stock	916

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	350 pF
Maximum Drain Current (ID):	620 A
Maximum Pulsed Drain Current (IDM):	2660 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	4
Minimum DS Breakdown Voltage:	80 V
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
JESD-30 Code:	R-XUUC-N4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	620 A
Maximum Drain-Source On Resistance:	.00053 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
916	-	-

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