Onsemi - NVMD4N03R2G

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NVMD4N03R2G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVMD4N03R2G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;
Datasheet NVMD4N03R2G Datasheet
In Stock1,354
NAME DESCRIPTION
Other Names: NVMD4N03R2G-ND
488-NVMD4N03R2GCT
488-NVMD4N03R2GTR
488-NVMD4N03R2GDKR
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 4 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 2 W
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 4 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
1,354 $0.543 $735.222

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