Onsemi - NVTFS5124PLTWG

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NVTFS5124PLTWG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVTFS5124PLTWG
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Maximum Pulsed Drain Current (IDM): 24 A; Moisture Sensitivity Level (MSL): 1;
Datasheet NVTFS5124PLTWG Datasheet
In Stock36,814
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 24 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 5
Maximum Power Dissipation (Abs): 18 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .38 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 8.5 mJ
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): 6 A
Peak Reflow Temperature (C): NOT SPECIFIED
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