NTBG015N065SC1 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTBG015N065SC1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 867 W; Case Connection: DRAIN; Moisture Sensitivity Level (MSL): 1;
Datasheet	NTBG015N065SC1 Datasheet
In Stock	765

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	176 A
Maximum Pulsed Drain Current (IDM):	873 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	7
Maximum Power Dissipation (Abs):	867 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G7
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Moisture Sensitivity Level (MSL):	1
Other Names:	488-NTBG015N065SC1DKR 488-NTBG015N065SC1TR 5556-NTBG015N065SC1CT 5556-NTBG015N065SC1TR 488-NTBG015N065SC1DKR-ND 488-NTBG015N065SC1TR-ND 488-NTBG015N065SC1CT 488-NTBG015N065SC1CT-ND 5556-NTBG015N065SC1DKR
Maximum Feedback Capacitance (Crss):	39.42 pF
JEDEC-95 Code:	TO-263CB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	650 V
Maximum Drain Current (Abs) (ID):	176 A
Peak Reflow Temperature (C):	245

Pricing (USD)

Qty.	Unit Price	Ext. Price
765	-	-

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;