Onsemi - NTHD3102CT1G

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NTHD3102CT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTHD3102CT1G
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Position: DUAL; Terminal Finish: MATTE TIN;
Datasheet NTHD3102CT1G Datasheet
In Stock26,697
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4 A
Maximum Pulsed Drain Current (IDM): 16 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-C8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .045 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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