Onsemi - FCB36N60NTM

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FCB36N60NTM by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FCB36N60NTM
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 312 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 600 V;
Datasheet FCB36N60NTM Datasheet
In Stock919
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 36 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 600 V
Maximum Power Dissipation (Abs): 312 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 36 A
Peak Reflow Temperature (C): 245
Maximum Drain-Source On Resistance: .09 ohm
Moisture Sensitivity Level (MSL): 1
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