Onsemi - NTH4L040N120SC1

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NTH4L040N120SC1 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTH4L040N120SC1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 319 W; Transistor Application: SWITCHING; Terminal Finish: Matte Tin (Sn) - annealed;
Datasheet NTH4L040N120SC1 Datasheet
In Stock393
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 66 ns
Maximum Drain Current (ID): 58 A
Maximum Pulsed Drain Current (IDM): 232 A
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 4
Maximum Power Dissipation (Abs): 319 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 71 ns
JESD-30 Code: R-PSFM-T4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .056 ohm
Avalanche Energy Rating (EAS): 578 mJ
Maximum Feedback Capacitance (Crss): 11 pF
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 1200 V
Maximum Drain Current (Abs) (ID): 58 A
Peak Reflow Temperature (C): NOT SPECIFIED
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