STMicroelectronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STB24N60DM2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

180 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.2 ohm

18 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

STB33N60M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STB47N60DM6AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

137 A

700 mJ

36 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.08 ohm

36 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STD105N10F7AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

120 W

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

80 A

NOT SPECIFIED

NOT SPECIFIED

STD14NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

18 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.32 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

STD2HNK60Z-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

120 mJ

2 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.8 ohm

2 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251AA

e3

STD85N10F7AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.01 ohm

70 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STF13NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

200 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.36 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STF14N80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

270 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.445 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

.8 pF

STF15N95K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

124 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.5 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

1 pF

STF18N60M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STF36N60M6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STF3NK80Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

170 mJ

2.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.5 ohm

2.5 A

SINGLE

R-PSFM-T3

1

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STF6N95K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

90 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.25 ohm

9 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STF7N95K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28.8 A

220 mJ

7.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.35 ohm

7.2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STF9N60M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STFW8N120K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STI28N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

350 mJ

22 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.15 ohm

22 A

SINGLE

R-PSIP-T3

DRAIN

NOT SPECIFIED

NOT SPECIFIED

STI33N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

104 A

450 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-50 Cel

.125 ohm

26 A

SINGLE

R-PSIP-T3

DRAIN

NOT SPECIFIED

NOT SPECIFIED

2.5 pF

STL16N60M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STL16N60M6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STL21N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

10.8 A

400 mJ

17 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.19 ohm

2.7 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

ULTRA-LOW RESISTANCE

e3

30

260

STL225N6F7AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

188 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

480 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0014 ohm

120 A

DUAL

R-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STL22N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

60 A

270 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.21 ohm

15 A

SINGLE

S-PSSO-N4

DRAIN

BULK: 3000

NOT SPECIFIED

NOT SPECIFIED

3.7 pF

STL36DN6F7

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

144 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.027 ohm

36 A

DUAL

R-PDSO-F6

1

DRAIN

e3

260

STL40N10F7

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STL4N10F7

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STL66DN3LLH5

STMicroelectronics

N-CHANNEL

YES

72 W

78.5 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

78.5 A

1

e3

30

260

STP100N10F7

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

400 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.008 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP140NF75

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

310 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

750 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0075 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STP18N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

210 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.22 ohm

15 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP18NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

350 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.285 ohm

13 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP20NK50Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

850 mJ

17 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.27 ohm

17 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP28N60DM2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STP3NK90ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

180 mJ

3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.8 ohm

3 A

SINGLE

R-PSFM-T3

1

ISOLATED

Not Qualified

TO-220AB

e3

STP42N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

950 mJ

33 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.079 ohm

33 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP45N60DM6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STP4NK60ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

120 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STP50N60DM6

STMicroelectronics

MATTE TIN

e3

STP5NK60ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

220 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.6 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STP6N95K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

90 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.25 ohm

9 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP6NK90Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

23.2 A

300 mJ

5.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

5.8 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, HIGH VOLTAGE

TO-220AB

e3

STP80NF70

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

68 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

392 A

700 mJ

98 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.0098 ohm

98 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

STP9NK50Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28.8 A

190 mJ

7.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.85 ohm

7.2 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP9NK65ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25.6 A

200 mJ

6.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

6.4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STP9NK70Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

230 mJ

7.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

7.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STQ1HNK60R-AP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3 W

PLASTIC/EPOXY

SWITCHING

600 V

WIRE

ROUND

ENHANCEMENT MODE

1

1.6 A

25 mJ

.4 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

8.5 ohm

.4 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

STQ1NC45R-AP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3.1 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

2 A

25 mJ

.5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.5 ohm

.5 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED

TO-92

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.