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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | STL22N65M5 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; |
| Datasheet | STL22N65M5 Datasheet |
| In Stock | 4,852 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 15 A |
| Maximum Pulsed Drain Current (IDM): | 60 A |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 110 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PSSO-N4 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .21 ohm |
| Avalanche Energy Rating (EAS): | 270 mJ |
| Other Names: |
497-13600-2 497-13600-1 -497-13600-2 497-13600-2-ND 497-STL22N65M5DKR -497-13600-1 497-13600-1-ND 497-STL22N65M5CT -497-13600-6 497-13600-6 497-STL22N65M5TR 497-13600-6-ND |
| Maximum Feedback Capacitance (Crss): | 3.7 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 650 V |
| Additional Features: | BULK: 3000 |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
