3.5 A RF Power Bipolar Junction Transistors (BJT) 8

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JESD-609 Code
SD1899	STMicroelectronics	NPN	SINGLE	YES	73 W	3.5 A	PLASTIC/EPOXY	AMPLIFIER	9.3 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	64.8 W	15	200 Cel		SILICON			DUAL	R-PDFM-F2	BASE	Not Qualified
AM80814-025	STMicroelectronics	NPN	SINGLE	YES	75 W	3.5 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
AM80912-030	STMicroelectronics	NPN	SINGLE	YES	75 W	3.5 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	7.8 dB	FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	250 Cel		SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
BLV193	NXP Semiconductors	NPN	SINGLE	YES	44 W	3.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	6.5 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors	44 W	25	200 Cel		SILICON	16 V		DUAL	R-CDFM-F6	ISOLATED	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
BLX69A	NXP Semiconductors	NPN	SINGLE	NO		3.5 A	PLASTIC/EPOXY	AMPLIFIER	4 dB	FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT				200 Cel		SILICON	18 V		RADIAL	O-PRPM-F4	ISOLATED	Not Qualified
2SC2639	Toshiba	NPN	SINGLE	YES	35 W	3.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	10.6 dB	FLAT	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	35 W	10	175 Cel	80 pF	SILICON	17 V		DUAL	R-CDFM-F4		Not Qualified
2SC2102	Toshiba	NPN	SINGLE	NO		3.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT					80 pF	SILICON	18 V		RADIAL	O-CRPM-F4		Not Qualified
2SC2178	Toshiba	NPN	SINGLE	NO		3.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT					80 pF	SILICON	18 V	TIN LEAD	RADIAL	O-CRFM-F4		Not Qualified		e0

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.