STMicroelectronics - SD1899

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .11 A; Package Shape: ROUND; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

SD1728D by STMicroelectronics is a NPN RF BJT transistor with 55V VCEO, 40A IC, and 360pF Cob. Ideal for high-frequency amplifier applications due to its single configuration and flat terminal form. Operates at up to 200 °C with a flange mount package style.

STMicroelectronics' SD1274-01 is a NPN RF Power BJT with 70W power dissipation, 175MHz fT, and 16V VCE. Ideal for high-frequency amplifier applications due to its very high frequency band capability. Package: PLASTIC/EPOXY, SINGLE configuration, FLANGE MOUNT style.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2500 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 12 A; Case Connection: BASE;

NPN; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 3 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 35 V; Transistor Element Material: SILICON;

The NXP Semiconductors BLT50,115 is a RF Power BJT transistor with NPN polarity and single configuration. It features a min power gain of 10 dB, operates in the ultra high frequency band, and has a max power dissipation of 2 W. Ideal for amplifier applications, this transistor has a max operating temperature of 175°C and can handle a collector current of 0.5 A.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.4 A; No. of Elements: 1; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 8 A; Case Connection: BASE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): 2.5 A; Terminal Position: RADIAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Case Connection: BASE; Terminal Position: DUAL; Transistor Element Material: SILICON;

RF Power Bipolar Transistors; Terminal Finish: GOLD; JESD-609 Code: e4;

STMicroelectronics' AM1517-025 is an NPN BJT transistor with 8.5 dB min power gain, ideal for amplifier applications in L Band frequencies. It has a max power dissipation of 45 W and can handle up to 2.5 A collector current, making it suitable for high-power RF amplification needs. The package is ceramic-metal sealed co-fired with a square shape and flange mount style for efficient heat dissipation.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .0011 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): .3 A;

STMicroelectronics' AM82731-050 is an NPN BJT transistor with a single configuration for switching applications in the S band. It offers a min power gain of 6 dB, max power dissipation of 167W, and can handle a max collector current of 8A. The package is ceramic-metal-sealed cofired with flange mount style and dual terminal position.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 2 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .4 A; Terminal Position: RADIAL;

RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; Package Shape: RECTANGULAR;