NXP Semiconductors - PPC5001T

  1. Home
  2. NXP Semiconductors - PPC5001T
PPC5001T by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PPC5001T
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
Datasheet PPC5001T Datasheet
In Stock1,710
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .25 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 16 V
Terminal Position: DUAL
Package Style (Meter): MICROWAVE
JESD-30 Code: R-CDMW-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: DIFFUSED EMITTER BALLAST RESISTOR
Highest Frequency Band: C BAND
Case Connection: BASE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,710 - -

Popular Products

Category Top Products

2SC2641 by Toshiba

2SC2641

Toshiba

The Toshiba 2SC2641 is an NPN RF Power BJT with a single configuration for amplifier applications. It offers a min power gain of 7.7 dB, operates in the ultra-high frequency band, and has a max collector-emitter voltage of 17 V. Ideal for flange mount setups, it can handle up to 15 W of power dissipation at a max operating temperature of 175°C.
BLW79 by NXP Semiconductors

BLW79

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .5 A; Minimum Power Gain (Gp): 9 dB;
BLW30 by NXP Semiconductors

BLW30

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1600 MHz; Maximum Collector Current (IC): 6 A; Package Style (Meter): POST/STUD MOUNT;
SD1530-08 by STMicroelectronics

SD1530-08

STMicroelectronics

SD1530-08 by STMicroelectronics is an NPN BJT transistor for switching applications in L Band. With 87.5W power dissipation, it operates at max 200 °C with a max collector-emitter voltage of 65V. This single configuration transistor has a max collector current of 2.6A and min hFE of 10, suitable for surface mount applications.
TH430 by STMicroelectronics

TH430

STMicroelectronics

STMicroelectronics TH430 is a NPN RF BJT with 55V VCEO, 40A IC, and 290W Ptot. Ideal for high-frequency amplifier applications due to its 360pF Ccb, hFE of 15, and operating temp up to 200 °C. Features flat terminals in a round plastic package suitable for surface mount assembly.
BFG591TRL by NXP Semiconductors

BFG591TRL

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
MSC81010 by STMicroelectronics

MSC81010

STMicroelectronics

STMicroelectronics' MSC81010 is a NPN RF BJT with 29W power dissipation, ideal for L Band amplification. Featuring 1A max collector current, hFE of 15, and 10pF collector-base capacitance, it operates up to 200 °C. The package is ceramic-metal co-fired with a round shape and flat terminals for post/stud mounting.
2N5641 by New Jersey Semiconductor Products

2N5641

New Jersey Semiconductor Products

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1 A;
LFE15600X by NXP Semiconductors

LFE15600X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Package Style (Meter): FLANGE MOUNT;
PTB42003X by NXP Semiconductors

PTB42003X

NXP Semiconductors

PTB42003X by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 14W, operates in the C band, and supports surface mount with a flat terminal design. Ideal for high-frequency amplification in compact systems.
LV1721E50R by NXP Semiconductors

LV1721E50R

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR;
PTB23003XA by NXP Semiconductors

PTB23003XA

NXP Semiconductors

PTB23003XA by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 0.5 A, operates up to 200 °C, and offers a min power gain of 8.75 dB in the C band. Its ceramic, metal-sealed package ensures durability in demanding environments.
BLV31 by NXP Semiconductors

BLV31

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1100 MHz; Maximum Collector Current (IC): 3 A; No. of Terminals: 4;
SD1528-06 by STMicroelectronics

SD1528-06

STMicroelectronics

STMicroelectronics' SD1528-06 is a NPN RF BJT transistor with 1.5A IC, 87.5W Pd, and hFE of 10. Ideal for L Band applications, it's a single configuration transistor for switching purposes in surface mount design with flat terminals.
2N5642 by STMicroelectronics

2N5642

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
2SC2104 by Toshiba

2SC2104

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Maximum Collector-Emitter Voltage: 17 V; No. of Terminals: 4;
BDP948E6327HTSA1 by Infineon Technologies

BDP948E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; JESD-609 Code: e3;
LXE15450XTRAY by NXP Semiconductors

LXE15450XTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F2;
BLT50T/R by NXP Semiconductors

BLT50T/R

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 175 Cel; No. of Elements: 1;
BLV945B by NXP Semiconductors

BLV945B

NXP Semiconductors

BLV945B by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 60W, operates at ultra-high frequencies, and offers a min power gain of 8.5 dB. Its ceramic, metal-sealed package ensures durability in demanding environments.