6 A RF Power Bipolar Junction Transistors (BJT) 32

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  2. RF Power Bipolar Junction Transistors (BJT)
Manufacturers
    • Analog Devices
    • Asi Semiconductor
    • Broadcom
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Maxim Integrated
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Texas Instruments
    • Toshiba
Polarity or Channel Type
    • NPN
    • NPN AND PNP
    • PNP
Configuration
    • COMMON BASE, 2 ELEMENTS
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 5 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT)
    • 100 MHz
    • 1000 MHz
    • 1025 MHz
    • 108 MHz
    • 1100 MHz
    • 1150 MHz
    • 1200 MHz
    • 1250 MHz
    • 1400 MHz
    • 160 MHz
    • 1600 MHz
    • 1650 MHz
    • 175 MHz
    • 200 MHz
    • 2000 MHz
    • 245 MHz
    • 250 MHz
    • 2500 MHz
    • 2700 MHz
    • 275 MHz
    • 2900 MHz
    • 300 MHz
    • 315 MHz
    • 320 MHz
    • 3200 MHz
    • 3300 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 3900 MHz
    • 400 MHz
    • 4000 MHz
    • 470 MHz
    • 50 MHz
    • 500 MHz
    • 525 MHz
    • 530 MHz
    • 540 MHz
    • 550 MHz
    • 5500 MHz
    • 570 MHz
    • 600 MHz
    • 6000 MHz
    • 625 MHz
    • 650 MHz
    • 6500 MHz
    • 700 MHz
    • 7000 MHz
    • 750 MHz
    • 800 MHz
    • 8000 MHz
    • 825 MHz
    • 850 MHz
    • 860 MHz
    • 900 MHz
    • 950 MHz
Maximum Power Dissipation (Abs)
    • .105 W
    • .225 W
    • .28 W
    • 1 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 10 W
    • 10.8 W
    • 100 W
    • 1000 W
    • 105 W
    • 107 W
    • 1070 W
    • 11 W
    • 11.5 W
    • 110 W
    • 1100 W
    • 1200 W
    • 125 W
    • 1250 W
    • 127 W
    • 1300 W
    • 132 W
    • 133 W
    • 134 W
    • 135 W
    • 1350 W
    • 1360 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 1460 W
    • 15 W
    • 150 W
    • 1500 W
    • 16.7 W
    • 160 W
    • 167 W
    • 1670 W
    • 17 W
    • 17.6 W
    • 175 W
    • 18 W
    • 18.8 W
    • 180 W
    • 185 W
    • 19.3 W
    • 19.4 W
    • 190 W
    • 2 W
    • 2.2 W
    • 2.3 W
    • 20 W
    • 20.6 W
    • 200 W
    • 21.4 W
    • 21.5 W
    • 21.8 W
    • 219 W
    • 220 W
    • 23 W
    • 230 W
    • 233 W
    • 245 W
    • 25 W
    • 250 W
    • 257 W
    • 27 W
    • 270 W
    • 28 W
    • 280 W
    • 29 W
    • 290 W
    • 3 W
    • 3.5 W
    • 30 W
    • 300 W
    • 31 W
    • 31.8 W
    • 310 W
    • 312 W
    • 318 W
    • 32 W
    • 320 W
    • 330 W
    • 34 W
    • 340 W
    • 35 W
    • 35.5 W
    • 350 W
    • 36 W
    • 37.2 W
    • 37.5 W
    • 375 W
    • 4 W
    • 4.2 W
    • 4.5 W
    • 40 W
    • 43 W
    • 438 W
    • 44 W
    • 45 W
    • 46 W
    • 5 W
    • 50 W
    • 500 W
    • 53 W
    • 57 W
    • 575 W
    • 58 W
    • 583 W
    • 6 W
    • 60 W
    • 600 W
    • 63 W
    • 630 W
    • 65 W
    • 67 W
    • 690 W
    • 7 W
    • 7.5 W
    • 7.6 W
    • 70 W
    • 71 W
    • 720 W
    • 73 W
    • 730 W
    • 75 W
    • 750 W
    • 76 W
    • 77 W
    • 786 W
    • 79.5 W
    • 8 W
    • 8.33 W
    • 8.7 W
    • 8.75 W
    • 80 W
    • 87 W
    • 87.5 W
    • 875 W
    • 88 W
    • 88.8 W
    • 880 W
    • 9 W
    • 9.2 W
    • 90 W
    • 910 W
    • 94 W
    • 940 W
    • 960 W
Maximum Collector Current (IC) (1)
    • 6 A
    • .001 A
    • .0011 A
    • .0113 A
    • .03 A
    • .05 A
    • .06 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .15 A
    • .2 A
    • .22 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .375 A
    • .4 A
    • .44 A
    • .45 A
    • .5 A
    • .54 A
    • .6 A
    • .62 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • .82 A
    • .85 A
    • .9 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.35 A
    • 1.4 A
    • 1.5 A
    • 1.59 A
    • 1.6 A
    • 1.65 A
    • 1.7 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 11 A
    • 12 A
    • 12.5 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17.5 A
    • 17.8 A
    • 18.75 A
    • 19.8 A
    • 2 A
    • 2.1 A
    • 2.25 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.67 A
    • 2.7 A
    • 2.75 A
    • 2.8 A
    • 20 A
    • 21 A
    • 21.6 A
    • 22 A
    • 24 A
    • 25 A
    • 27 A
    • 28 A
    • 3 A
    • 3.25 A
    • 3.5 A
    • 3.7 A
    • 32 A
    • 35 A
    • 36 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.8 A
    • 40 A
    • 43.2 A
    • 45 A
    • 5 A
    • 5.4 A
    • 5.5 A
    • 5.52 A
    • 5.7 A
    • 50 A
    • 6.5 A
    • 6.7 A
    • 7 A
    • 7.4 A
    • 7.7 A
    • 7.8 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .5 V
    • 1 V
    • 1.5 V
    • 3 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.6 dB
    • 10.8 dB
    • 11 dB
    • 11.5 dB
    • 11.8 dB
    • 12 dB
    • 12.2 dB
    • 13 dB
    • 13.5 dB
    • 15 dB
    • 16 dB
    • 17 dB
    • 18 dB
    • 4 dB
    • 4.15 dB
    • 4.3 dB
    • 4.4 dB
    • 4.5 dB
    • 4.8 dB
    • 4.88 dB
    • 4.9 dB
    • 5 dB
    • 5.1 dB
    • 5.2 dB
    • 5.4 dB
    • 5.5 dB
    • 5.6 dB
    • 5.7 dB
    • 6 dB
    • 6.2 dB
    • 6.3 dB
    • 6.4 dB
    • 6.5 dB
    • 6.6 dB
    • 6.7 dB
    • 6.8 dB
    • 6.9 dB
    • 7 dB
    • 7.2 dB
    • 7.3 dB
    • 7.4 dB
    • 7.5 dB
    • 7.7 dB
    • 7.8 dB
    • 8 dB
    • 8.1 dB
    • 8.4 dB
    • 8.5 dB
    • 8.6 dB
    • 8.7 dB
    • 8.75 dB
    • 8.8 dB
    • 9 dB
    • 9.2 dB
    • 9.3 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 5
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
No. of Terminals
    • 10
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP RF Small Signal
    • Other Transistors
Maximum Power Dissipation Ambient
    • .2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 10.8 W
    • 100 W
    • 105 W
    • 11 W
    • 11.6 W
    • 116 W
    • 12 W
    • 12.5 W
    • 120 W
    • 125 W
    • 132 W
    • 133 W
    • 134 W
    • 14 W
    • 145 W
    • 15 W
    • 150 W
    • 154 W
    • 17 W
    • 175 W
    • 18 W
    • 18.6 W
    • 19.3 W
    • 2 W
    • 20 W
    • 200 W
    • 21.5 W
    • 215 W
    • 218 W
    • 220 W
    • 23 W
    • 230 W
    • 25 W
    • 250 W
    • 27 W
    • 270 W
    • 29 W
    • 290 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 32.5 W
    • 320 W
    • 340 W
    • 35 W
    • 350 W
    • 38 W
    • 40 W
    • 41 W
    • 44 W
    • 45 W
    • 46 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 57 W
    • 6 W
    • 60 W
    • 64.8 W
    • 67 W
    • 68 W
    • 7.5 W
    • 70 W
    • 77 W
    • 8 W
    • 8.5 W
    • 80 W
    • 82 W
    • 87 W
    • 9 W
    • 9.6 W
    • 90 W
    • 94 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 120
    • 15
    • 18
    • 19
    • 20
    • 25
    • 30
    • 40
    • 45
    • 5
    • 50
    • 60
    • 75
    • 8
    • 80
    • 85
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 250 Cel
Maximum Collector-Base Capacitance
    • 10 pF
    • 100 pF
    • 120 pF
    • 125 pF
    • 130 pF
    • 15 pF
    • 150 pF
    • 16 pF
    • 160 pF
    • 18 pF
    • 19 pF
    • 2.6 pF
    • 20 pF
    • 200 pF
    • 220 pF
    • 24 pF
    • 240 pF
    • 25 pF
    • 250 pF
    • 28 pF
    • 3 pF
    • 3.5 pF
    • 3.6 pF
    • 3.7 pF
    • 30 pF
    • 300 pF
    • 320 pF
    • 330 pF
    • 36 pF
    • 360 pF
    • 4.2 pF
    • 40 pF
    • 45 pF
    • 450 pF
    • 48 pF
    • 5 pF
    • 5.2 pF
    • 50 pF
    • 500 pF
    • 55 pF
    • 6 pF
    • 6.5 pF
    • 600 pF
    • 65 pF
    • 7 pF
    • 7.5 pF
    • 8 pF
    • 8.5 pF
    • 80 pF
    • 85 pF
    • 90 pF
    • 95 pF
Transistor Element Material
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 110 V
    • 12 V
    • 15 V
    • 16 V
    • 16.5 V
    • 17 V
    • 18 V
    • 19 V
    • 20 V
    • 22 V
    • 24 V
    • 25 V
    • 250 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 35 V
    • 36 V
    • 40 V
    • 400 V
    • 45 V
    • 53 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7.2 V
    • 70 V
    • 75 V
    • 8 V
Minimum Operating Temperature
    • -55 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn) - annealed
    • NICKEL
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • Tin (Sn)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRFM-F4
    • O-CRFM-F6
    • O-CRMW-F4
    • O-CRPM-F2
    • O-CRPM-F4
    • O-CUPM-P3
    • O-CXFM-F4
    • O-CXFM-F6
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBFM-P3
    • O-MRDB-F4
    • O-MUPM-P3
    • O-MUPM-W3
    • O-PDFM-F2
    • O-PRDB-F4
    • O-PRFM-F2
    • O-PRFM-F4
    • O-PRPM-F4
    • O-PXFM-F6
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFP-F16
    • R-CDFP-F2
    • R-CDFP-F6
    • R-CDMW-F2
    • R-CDSO-G8
    • R-CQCC-N3
    • R-MDFM-F2
    • R-MDFM-F4
    • R-MDFM-F6
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDIP-T14
    • R-PDSO-G10
    • R-PDSO-G14
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-XRPM-F4
    • R-XUUC-N16
    • R-XUUC-N5
    • S-CDFM-F2
    • S-CQMW-F4
    • S-PDFM-F2
    • S-PDPM-F4
    • X-PXPM-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • DIFFUSED EMITTER BALLAST RESISTOR
    • DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, HIGH VOLTAGE
    • HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
    • HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
    • LOW NOISE
    • WITH EMITTER BALLASTING RESISTORS
JEDEC-95 Code
    • TO-117
    • TO-126
    • TO-220AB
    • TO-251
    • TO-33
    • TO-39
    • TO-60
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 235
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • MIL-38535; RH - 100K Rad(Si)
    • MIL-38535; RH - 300K Rad(Si)
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

AM83135-030

STMicroelectronics

NPN

SINGLE

YES

133 W

6 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

5.5 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

30

250 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

933994050114

NXP Semiconductors

NPN

SINGLE

YES

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

20 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

LXE16350X

NXP Semiconductors

NPN

SINGLE

YES

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

57 W

15

200 Cel

SILICON

20 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

PXB16050UTRAY

NXP Semiconductors

NPN

SINGLE

YES

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

67 W

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

BLW31

NXP Semiconductors

NPN

SINGLE

YES

700 MHz

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

DISK BUTTON

10

200 Cel

SILICON

18 V

RADIAL

O-CRDB-F4

Not Qualified

BLU30/12

NXP Semiconductors

NPN

SINGLE

YES

65 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

16.5 V

UNSPECIFIED

O-CXFM-F6

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BLV946

NXP Semiconductors

NPN

SINGLE

YES

90 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

90 W

30

200 Cel

SILICON

30 V

DUAL

R-CDFM-F6

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS

BLW30

NXP Semiconductors

NPN

SINGLE

NO

1600 MHz

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

25

200 Cel

100 pF

SILICON

16 V

RADIAL

O-CRPM-F4

ISOLATED

Not Qualified

LXE18300X

NXP Semiconductors

NPN

SINGLE

YES

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

57 W

20

200 Cel

SILICON

20 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

PXB16050U

NXP Semiconductors

NPN

SINGLE

YES

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

67 W

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

BLW87

NXP Semiconductors

NPN

SINGLE

NO

800 MHz

76 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

200 Cel

SILICON

18 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLS3135-50

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

80 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

40

200 Cel

SILICON

75 V

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

BLV12

NXP Semiconductors

NPN

SINGLE

NO

1600 MHz

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

25

200 Cel

100 pF

SILICON

16 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLS2731-50

NXP Semiconductors

NPN

SINGLE

YES

180 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

25

200 Cel

SILICON

DUAL

R-CDFM-F2

NOT APPLICABLE

BASE

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

RZ1214B65Y

NXP Semiconductors

NPN

SINGLE

YES

.225 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

MX0912B100Y

NXP Semiconductors

NPN

SINGLE

YES

290 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

20 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

MRF6414

NXP Semiconductors

NPN

SINGLE

YES

134 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

134 W

30

150 Cel

SILICON

28 V

DUAL

R-CDFM-F6

Not Qualified

WITH EMITTER BALLASTING RESISTORS

MZ0912B100Y

NXP Semiconductors

NPN

SINGLE

YES

290 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

20 V

DUAL

R-CDFM-F2

NOT APPLICABLE

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

BLY94

NXP Semiconductors

NPN

SINGLE

NO

500 MHz

6 A

PLASTIC/EPOXY

AMPLIFIER

7 dB

FLAT

UNSPECIFIED

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

10

200 Cel

130 pF

SILICON

36 V

UNSPECIFIED

X-PXPM-F4

ISOLATED

Not Qualified

BLY89C

NXP Semiconductors

NPN

SINGLE

NO

750 MHz

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

10

200 Cel

90 pF

SILICON

18 V

RADIAL

O-CRPM-F4

ISOLATED

Not Qualified

LLE15370X

NXP Semiconductors

NPN

SINGLE

YES

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

50 W

15

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

LLE16350X

NXP Semiconductors

NPN

SINGLE

YES

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

50 W

15

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

LLE18300XTRAY

NXP Semiconductors

NPN

SINGLE

YES

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.8 dB

FLAT

SQUARE

1

L BAND

2

FLANGE MOUNT

50 W

15

200 Cel

SILICON

15 V

DUAL

S-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

LLE18300X

NXP Semiconductors

NPN

SINGLE

YES

50 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.8 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

50 W

15

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

LLE15370XTRAY

NXP Semiconductors

NPN

SINGLE

YES

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

SQUARE

1

L BAND

2

FLANGE MOUNT

50 W

15

200 Cel

SILICON

15 V

DUAL

S-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

2SC2643

Toshiba

NPN

SINGLE

YES

50 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.9 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

50 W

10

175 Cel

80 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

2SC2640

Toshiba

NPN

SINGLE

YES

70 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.4 dB

FLAT

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

70 W

10

175 Cel

160 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

2SC2381

Toshiba

NPN

SINGLE

NO

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

80 pF

SILICON

17 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

2SC2098

Toshiba

NPN

SINGLE

NO

100 MHz

6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

120 pF

SILICON

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

2SC2099

Toshiba

NPN

SINGLE

NO

100 MHz

60 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

12 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

20

175 Cel

250 pF

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2173

Toshiba

NPN

SINGLE

NO

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

80 pF

SILICON

18 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2103A

Toshiba

NPN

SINGLE

NO

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

80 pF

SILICON

18 V

RADIAL

O-CRPM-F4

Not Qualified

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.