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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | MZ0912B100Y |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 7 dB; |
| Datasheet | MZ0912B100Y Datasheet |
| In Stock | 2,773 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Collector Current (IC): | 6 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 290 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-CDFM-F2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Highest Frequency Band: | L BAND |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | BASE |
| Moisture Sensitivity Level (MSL): | NOT APPLICABLE |
| Minimum Power Gain (Gp): | 7 dB |
| Polarity or Channel Type: | NPN |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 20 V |
| Additional Features: | DIFFUSED EMITTER BALLASTING RESISTORS |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
