NXP Semiconductors - LTE42012RTRAY

LTE42012RTRAY by NXP Semiconductors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	LTE42012RTRAY
Description	NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .4 A; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: C BAND;
Datasheet	LTE42012RTRAY Datasheet
In Stock	394

LTE42012RTRAY Technical Details

NAME	DESCRIPTION
Minimum Power Gain (Gp):	7 dB
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC):	.4 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	NO
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	RADIAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-CRFM-F2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Highest Frequency Band:	C BAND

Pricing (USD)

Qty.	Unit Price	Ext. Price
394	-	-

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