NXP Semiconductors - LTE42012R

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LTE42012R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number LTE42012R
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
Datasheet LTE42012R Datasheet
In Stock2,836
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .8 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: NO
No. of Terminals: 2
Maximum Power Dissipation (Abs): 8 W
Terminal Position: RADIAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-CRFM-F2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Highest Frequency Band: C BAND
Maximum Operating Temperature: 200 Cel
Case Connection: EMITTER
Maximum Power Dissipation Ambient: 8 W
Minimum Power Gain (Gp): 6 dB
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 15
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 16 V
Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS
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