Onsemi - MC3346P

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .62 A; Maximum Operating Temperature: 200 Cel;

SD1893-03 by STMicroelectronics is a NPN RF BJT with 15V VCEO, 4.4A IC, and 43W Ptot. Ideal for L Band applications, this transistor has a hFE of 15 and operates up to 200 °C. Package: Ceramic/Metal-Sealed Cofired, Single Configuration, Flange Mount style with Radial terminals.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 9 dB;

STMicroelectronics' AM1517-025 is an NPN BJT transistor with 8.5 dB min power gain, ideal for amplifier applications in L Band frequencies. It has a max power dissipation of 45 W and can handle up to 2.5 A collector current, making it suitable for high-power RF amplification needs. The package is ceramic-metal sealed co-fired with a square shape and flange mount style for efficient heat dissipation.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; Package Shape: RECTANGULAR; Terminal Form: FLAT;

STMicroelectronics' AM1214-200 is an NPN RF BJT with 7 dB min power gain, ideal for L Band switching applications. It features a max power dissipation of 575 W, 40 V max collector-emitter voltage, and operates up to 250 °C. The transistor has a single configuration in a ceramic-metal-sealed co-fired package with flange mount style.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): 1.6 A; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 350 MHz; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 10 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 7 A; No. of Terminals: 2; Terminal Form: FLAT;

RF Power Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH;

The Toshiba 2SC2290 is a NPN RF Power BJT with 11.8 dB power gain, ideal for amplifier applications in the high-frequency band. It features a max power dissipation of 175W, collector-emitter voltage of 18V, and transition frequency of 100MHz.

NPN; Configuration: SINGLE; Surface Mount: YES; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS; No. of Elements: 1; Case Connection: BASE;

RF Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Terminal Form: FLAT; Terminal Position: RADIAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .9 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A; Minimum DC Current Gain (hFE): 40;

Onsemi's 2SC3597E is an NPN RF Power BJT with a max. collector-emitter voltage of 60V and max. collector current of 0.5A. Ideal for switching applications, it has a nominal transition frequency of 800MHz. Package style is flange mount with through-hole terminals in a rectangular shape.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 8;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9 A; Minimum DC Current Gain (hFE): 15; Transistor Element Material: SILICON;