Onsemi - MC3346P

  1. Home
  2. Onsemi - MC3346P
MC3346P by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number MC3346P
Description NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Package Style (Meter): IN-LINE;
Datasheet MC3346P Datasheet
In Stock1,567
NAME DESCRIPTION
Nominal Transition Frequency (fT): 550 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Surface Mount: NO
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 14
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 15 V
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-PDIP-T14
No. of Elements: 5
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,567 - -

Popular Products

Category Top Products

934054887114 by NXP Semiconductors

934054887114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; No. of Terminals: 2;
BLV2347 by NXP Semiconductors

BLV2347

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
SD1459 by STMicroelectronics

SD1459

STMicroelectronics

SD1459 by STMicroelectronics is a NPN RF Power BJT with 4 terminals, capable of handling up to 150W power dissipation. It operates in the VHF band and has a max collector-emitter voltage of 30V. Ideal for amplifier applications due to its high current capacity and very high frequency band support.
LLE16045X by NXP Semiconductors

LLE16045X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): .5 A; Minimum Power Gain (Gp): 8.5 dB;
MTB10010U by NXP Semiconductors

MTB10010U

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): .75 A; Package Shape: ROUND;
BLV93 by NXP Semiconductors

BLV93

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): 1.6 A; Maximum Operating Temperature: 200 Cel;
RX1214B300Y,114 by NXP Semiconductors

RX1214B300Y,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; No. of Elements: 1; Additional Features: WITH EMITTER BALLASTING RESISTORS;
BLW90 by NXP Semiconductors

BLW90

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .62 A; Maximum Operating Temperature: 200 Cel;
SD1899 by STMicroelectronics

SD1899

STMicroelectronics

SD1899 by STMicroelectronics is an NPN RF BJT transistor with a single configuration for amplifier applications. It offers a min power gain of 9.3 dB, max power dissipation of 73W, and operates in the L band frequency range. Ideal for surface mount designs with a rectangular package shape and flat terminal form.
MAX2602E/W by Maxim Integrated

MAX2602E/W

Maxim Integrated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Transistor Application: AMPLIFIER; JESD-30 Code: R-PDSO-G8;
2SC2879 by Asi Semiconductor

2SC2879

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 25 A;
LLE18100X by NXP Semiconductors

LLE18100X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 15; Maximum Power Dissipation Ambient: 23 W;
2N3866A by New Jersey Semiconductor Products

2N3866A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .4 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
LV1721E50RTRAY by NXP Semiconductors

LV1721E50RTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .0011 A; Terminal Position: DUAL; Terminal Form: FLAT;
PZ2024B20U by NXP Semiconductors

PZ2024B20U

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; No. of Elements: 1; JESD-30 Code: R-CDFM-F2;
AM2931-125 by STMicroelectronics

AM2931-125

STMicroelectronics

STMicroelectronics' AM2931-125 is a NPN RF BJT transistor with 500W power dissipation, ideal for S Band applications. Featuring a single configuration and 16A max collector current, it operates up to 250 °C in a ceramic-metal package suitable for switching purposes.
2SC3597D by Onsemi

2SC3597D

Onsemi

Onsemi's 2SC3597D is an NPN RF Power BJT with a max. collector-emitter voltage of 60V and max. collector current of 0.5A. Ideal for switching applications, it has a nominal transition frequency of 800MHz and comes in a rectangular package style for through-hole mounting.
AM2931-110 by STMicroelectronics

AM2931-110

STMicroelectronics

STMicroelectronics' AM2931-110 is an NPN BJT transistor for switching applications. It offers a min power gain of 6.2 dB and can handle up to 375 W power dissipation. With a max collector current of 12 A, it is ideal for S Band frequency band applications.
SD4590 by STMicroelectronics

SD4590

STMicroelectronics

SD4590 by STMicroelectronics is an NPN RF Power BJT with 2 elements, ideal for amplifier applications in the UHF band. It has a max power dissipation of 300W, operates at up to 200 °C, and features a common emitter configuration.
BLS2731-20 by NXP Semiconductors

BLS2731-20

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 3 A; Package Shape: RECTANGULAR;