NXP Semiconductors - BLV75/12

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BLV75/12 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLV75/12
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; JESD-30 Code: O-CXFM-F6;
Datasheet BLV75/12 Datasheet
In Stock4,480
NAME DESCRIPTION
Minimum Power Gain (Gp): 6.5 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): 15 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 15
No. of Terminals: 6
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 150 W
Maximum Collector-Emitter Voltage: 16.5 V
Terminal Position: UNSPECIFIED
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-CXFM-F6
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: ISOLATED
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