NXP Semiconductors - LTE42008RTRAY

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LTE42008RTRAY by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number LTE42008RTRAY
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .25 A; Highest Frequency Band: C BAND; Transistor Element Material: SILICON;
Datasheet LTE42008RTRAY Datasheet
In Stock1,595
NAME DESCRIPTION
Minimum Power Gain (Gp): 7.5 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .25 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: NO
No. of Terminals: 2
Qualification: Not Qualified
Terminal Position: RADIAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-CRFM-F2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Highest Frequency Band: C BAND
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