NXP Semiconductors - LCE2003S

Onsemi's 2SA1403D is a PNP RF BJT with max. Vce of 60V and Ic of 0.5A. Ideal for switching applications, it has fT of 800MHz. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8;

AM1517-025M by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 2.5 A, operates in the L band, and comes in a square ceramic package with flat terminals. Ideal for surface mount designs, it ensures reliable performance in various electronic circuits.

STMicroelectronics' AM1517-025 is an NPN BJT transistor with 8.5 dB min power gain, ideal for amplifier applications in L Band frequencies. It has a max power dissipation of 45 W and can handle up to 2.5 A collector current, making it suitable for high-power RF amplification needs. The package is ceramic-metal sealed co-fired with a square shape and flange mount style for efficient heat dissipation.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 15;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 275 MHz; Maximum Collector Current (IC): 6.5 A; Qualification: Not Qualified;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Style (Meter): SMALL OUTLINE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3500 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;

SD1897 by STMicroelectronics is a NPN RF Power BJT with 29W power dissipation, suitable for L Band applications. It has a max collector current of 2.3A and operates at up to 200°C temperature. Ideal for amplifier circuits in surface mount configurations.

BLV948 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 320W, operates in the UHF band, and offers a min power gain of 6.5 dB. Its robust ceramic-metal package ensures reliability in demanding environments.

Onsemi's 2SC3597E is an NPN RF Power BJT with a max. collector-emitter voltage of 60V and max. collector current of 0.5A. Ideal for switching applications, it has a nominal transition frequency of 800MHz. Package style is flange mount with through-hole terminals in a rectangular shape.

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Transistor Element Material: SILICON; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4.2 A; Package Style (Meter): FLANGE MOUNT; Minimum Power Gain (Gp): 5.5 dB;

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Additional Features: LOW NOISE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 315 MHz; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 8 A; JESD-609 Code: e0;

2N4440 by Texas Instruments is a NPN RF BJT with 40V VCEO, 1.5A IC, and 400MHz fT. Ideal for high-frequency applications due to its metal package and 11W Ptot. Suitable for amplification in RF circuits requiring low hFE of 10.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Qualification: Not Qualified; Additional Features: WITH EMITTER BALLASTING RESISTORS;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; JESD-30 Code: R-PDSO-G4;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): .3 A;