Texas Instruments - 2N4440

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Maximum Collector Current (IC): 4 A; Maximum Collector-Base Capacitance: 28 pF;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3500 MHz; Maximum Collector Current (IC): .15 A; Qualification: Not Qualified;

SD1446 by STMicroelectronics is an NPN RF Power BJT with a max collector-emitter voltage of 18V and a max collector current of 12A. It is designed for ultra-high frequency band applications, featuring a plastic/epoxy package body material and radial terminal position. Ideal for amplifier circuits in the UHF band, this transistor has a single configuration with 4 terminals in a round flange mount package style.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4000 MHz; Maximum Power Dissipation (Abs): 9 W; Maximum Collector Current (IC): .6 A;

SD1439 by STMicroelectronics is a NPN RF BJT transistor with 4 terminals, suitable for amplifier applications in the UHF band. It has a max power dissipation of 8.75W, hFE of 15, and VCE of 24V. Ideal for high-frequency amplification due to its silicon element material and radial terminal position.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .3 A; Terminal Position: DUAL; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8.7 W; Maximum Collector Current (IC): .75 A; Terminal Position: RADIAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON; No. of Elements: 1;

STMicroelectronics AM82223-010 is an NPN BJT transistor with 6.5 dB min power gain, suitable for amplifier applications in S Band frequencies. It has a max power dissipation of 28 W, operates up to 200 °C, and features a flange mount package style for easy installation.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; No. of Terminals: 2; Case Connection: EMITTER;

STMicroelectronics AM81214-6 is a NPN RF BJT transistor with 16.7W power dissipation, suitable for L Band applications. It has a max collector current of 0.82A and operates at up to 250 °C temperature, making it ideal for high-frequency switching in various electronic devices.

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Minimum Operating Temperature: -55 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.5 A; Terminal Position: RADIAL; Package Shape: ROUND;

STMicroelectronics AM1416-220 is an NPN RF BJT transistor for amplifier applications. It operates in L Band with a highest frequency band. The package is ceramic-metal-sealed cofired, surface mountable, and has 2 terminals in a rectangular shape suitable for flange mounting.

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): 9 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 35 V;

RF Power Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH;