NXP Semiconductors - 935377832118

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935377832118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935377832118
Description RF Power Bipolar Transistors;
Datasheet 935377832118 Datasheet
In Stock2,586
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BLW30 by NXP Semiconductors

BLW30

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1600 MHz; Maximum Collector Current (IC): 6 A; Package Style (Meter): POST/STUD MOUNT;
933994040114 by NXP Semiconductors

933994040114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Terminals: 2; Qualification: Not Qualified;
MRF392 by Tyco Electronics M/a-com

MRF392

Tyco Electronics M/a-com

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 16 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
LV2327E40R by NXP Semiconductors

LV2327E40R

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F2;
PTB20017 by Infineon Technologies

PTB20017

Infineon Technologies

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-CDFM-F4; JESD-609 Code: e3;
ISL73096RHVF by Renesas Electronics

ISL73096RHVF

Renesas Electronics

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Additional Features: LOW NOISE;
BLV10 by NXP Semiconductors

BLV10

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 950 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 1.5 A;
BLY88C by NXP Semiconductors

BLY88C

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON;
AM83135-010 by STMicroelectronics

AM83135-010

STMicroelectronics

STMicroelectronics AM83135-010 is a NPN RF BJT transistor with 5 dB min power gain, suitable for S Band applications. It has a max power dissipation of 50 W and can handle up to 2 A collector current. The package is ceramic-metal sealed co-fired with flange mount style.
BLS2731-20,114 by NXP Semiconductors

BLS2731-20,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Case Connection: BASE; Package Style (Meter): FLANGE MOUNT;
BLW90 by NXP Semiconductors

BLW90

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .62 A; Maximum Operating Temperature: 200 Cel;
LXE18400X by NXP Semiconductors

LXE18400X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 9 A; JESD-30 Code: R-CDFM-F2;
BLS2731-110 by NXP Semiconductors

BLS2731-110

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 12 A; Minimum DC Current Gain (hFE): 40;
BFQ254/1 by NXP Semiconductors

BFQ254/1

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-CRPM-F4; Package Shape: ROUND; No. of Terminals: 4;
2N4128 by Texas Instruments

2N4128

Texas Instruments

The Texas Instruments 2N4128 is an NPN RF BJT with a max. collector-emitter voltage of 40V and max. power dissipation of 40W. Ideal for very high frequency band applications, it has a nominal transition frequency of 400MHz and can handle a max. collector current of 5A.
2SC3218-M by Renesas Electronics

2SC3218-M

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 20;
2N5642 by Asi Semiconductor

2N5642

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
BLV31 by NXP Semiconductors

BLV31

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1100 MHz; Maximum Collector Current (IC): 3 A; No. of Terminals: 4;
BLV101B by NXP Semiconductors

BLV101B

NXP Semiconductors

BLV101B by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 7.5 dB, operates at ultra-high frequencies, and supports a max collector current of 10 A. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
MAX2601ESA+ by Analog Devices

MAX2601ESA+

Analog Devices

MAX2601ESA+ by Analog Devices is a NPN BJT transistor with 8 terminals, operating at 150°C. It has a max collector-emitter voltage of 15V and max current of 1.2A, ideal for ultra-high frequency band amplification in surface-mount applications.