NXP Semiconductors - MRF6409

  1. Home
  2. NXP Semiconductors - MRF6409
MRF6409 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF6409
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; No. of Terminals: 6;
Datasheet MRF6409 Datasheet
In Stock2,634
NAME DESCRIPTION
Minimum Power Gain (Gp): 10 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): 5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 20
No. of Terminals: 6
Maximum Collector-Emitter Voltage: 24 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,634 - -

Popular Products

Category Top Products

1214-110M by Microsemi

1214-110M

Microsemi

Microsemi's 1214-110M is a NPN RF Power BJT with 270W power dissipation, suitable for L Band applications. It features a ceramic-metal-sealed co-fired package, flat terminal form, and dual terminal position. Ideal for amplifier circuits requiring up to 8A collector current in high temperature environments up to 200°C.
1090MP by Advanced Power Technology

1090MP

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: O-CRDB-F4; Terminal Position: RADIAL; No. of Terminals: 4;
933755380114 by NXP Semiconductors

933755380114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 15 V;
BLV99 by NXP Semiconductors

BLV99

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLT52T/R by NXP Semiconductors

BLT52T/R

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Package Shape: RECTANGULAR; Maximum Power Dissipation Ambient: 23 W;
5962F0721806VXC by Renesas Electronics

5962F0721806VXC

Renesas Electronics

PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; JESD-30 Code: R-CDFP-F16;
ISL73096RHX/SAMPLE by Renesas Electronics

ISL73096RHX/SAMPLE

Renesas Electronics

RF Power Bipolar Transistors;
2SC2879 by Asi Semiconductor

2SC2879

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 25 A;
2N5946 by Motorola

2N5946

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 37 W; Maximum Collector Current (IC): 2 A; No. of Terminals: 4;
PTB20264 by Infineon Technologies

PTB20264

Infineon Technologies

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 2 A; Terminal Finish: MATTE TIN; Maximum Collector-Emitter Voltage: 22 V; Transistor Application: AMPLIFIER;
2SC2181 by Toshiba

2SC2181

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
PTB32003X by NXP Semiconductors

PTB32003X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7.6 W; Maximum Collector Current (IC): .5 A; Package Shape: ROUND;
MX0912B350Y by NXP Semiconductors

MX0912B350Y

NXP Semiconductors

MX0912B350Y by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector-emitter voltage of 20V, operates up to 200 °C, and offers a min power gain of 7 dB. Ideal for L-band surface mount designs.
LV2024E45R by NXP Semiconductors

LV2024E45R

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Terminal Form: FLAT; Maximum Power Dissipation Ambient: 18 W;
BFG741 by NXP Semiconductors

BFG741

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;
MZ0912B100Y,114 by NXP Semiconductors

MZ0912B100Y,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Terminal Form: FLAT; Maximum Operating Temperature: 200 Cel;
SD4100 by STMicroelectronics

SD4100

STMicroelectronics

SD4100 by STMicroelectronics is an NPN RF power BJT designed for amplifier applications, featuring a max power dissipation of 220 W and operating temp up to 200 °C. It supports ultra-high frequency bands with a collector current of 16 A. Its ceramic, metal-sealed package ensures durability in demanding environments.
MAPRST0912-50 by M/a-com Technology Solutions

MAPRST0912-50

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; JESD-30 Code: R-CDFM-F2; Terminal Position: DUAL;
BLV101A by NXP Semiconductors

BLV101A

NXP Semiconductors

BLV101A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 8.5 dB, operates at ultra-high frequencies, and supports up to 10 A collector current. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
2SC2639 by Toshiba

2SC2639

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 3.5 A; Maximum Operating Temperature: 175 Cel;