8 A RF Power Bipolar Junction Transistors (BJT) 28

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  2. RF Power Bipolar Junction Transistors (BJT)
Manufacturers
    • Analog Devices
    • Asi Semiconductor
    • Broadcom
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Maxim Integrated
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Texas Instruments
    • Toshiba
Polarity or Channel Type
    • NPN
    • NPN AND PNP
    • PNP
Configuration
    • COMMON BASE, 2 ELEMENTS
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 5 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT)
    • 100 MHz
    • 1000 MHz
    • 1025 MHz
    • 108 MHz
    • 1100 MHz
    • 1150 MHz
    • 1200 MHz
    • 1250 MHz
    • 1400 MHz
    • 160 MHz
    • 1600 MHz
    • 1650 MHz
    • 175 MHz
    • 200 MHz
    • 2000 MHz
    • 245 MHz
    • 250 MHz
    • 2500 MHz
    • 2700 MHz
    • 275 MHz
    • 2900 MHz
    • 300 MHz
    • 315 MHz
    • 320 MHz
    • 3200 MHz
    • 3300 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 3900 MHz
    • 400 MHz
    • 4000 MHz
    • 470 MHz
    • 50 MHz
    • 500 MHz
    • 525 MHz
    • 530 MHz
    • 540 MHz
    • 550 MHz
    • 5500 MHz
    • 570 MHz
    • 600 MHz
    • 6000 MHz
    • 625 MHz
    • 650 MHz
    • 6500 MHz
    • 700 MHz
    • 7000 MHz
    • 750 MHz
    • 800 MHz
    • 8000 MHz
    • 825 MHz
    • 850 MHz
    • 860 MHz
    • 900 MHz
    • 950 MHz
Maximum Power Dissipation (Abs)
    • .105 W
    • .225 W
    • .28 W
    • 1 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 10 W
    • 10.8 W
    • 100 W
    • 1000 W
    • 105 W
    • 107 W
    • 1070 W
    • 11 W
    • 11.5 W
    • 110 W
    • 1100 W
    • 1200 W
    • 125 W
    • 1250 W
    • 127 W
    • 1300 W
    • 132 W
    • 133 W
    • 134 W
    • 135 W
    • 1350 W
    • 1360 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 1460 W
    • 15 W
    • 150 W
    • 1500 W
    • 16.7 W
    • 160 W
    • 167 W
    • 1670 W
    • 17 W
    • 17.6 W
    • 175 W
    • 18 W
    • 18.8 W
    • 180 W
    • 185 W
    • 19.3 W
    • 19.4 W
    • 190 W
    • 2 W
    • 2.2 W
    • 2.3 W
    • 20 W
    • 20.6 W
    • 200 W
    • 21.4 W
    • 21.5 W
    • 21.8 W
    • 219 W
    • 220 W
    • 23 W
    • 230 W
    • 233 W
    • 245 W
    • 25 W
    • 250 W
    • 257 W
    • 27 W
    • 270 W
    • 28 W
    • 280 W
    • 29 W
    • 290 W
    • 3 W
    • 3.5 W
    • 30 W
    • 300 W
    • 31 W
    • 31.8 W
    • 310 W
    • 312 W
    • 318 W
    • 32 W
    • 320 W
    • 330 W
    • 34 W
    • 340 W
    • 35 W
    • 35.5 W
    • 350 W
    • 36 W
    • 37.2 W
    • 37.5 W
    • 375 W
    • 4 W
    • 4.2 W
    • 4.5 W
    • 40 W
    • 43 W
    • 438 W
    • 44 W
    • 45 W
    • 46 W
    • 5 W
    • 50 W
    • 500 W
    • 53 W
    • 57 W
    • 575 W
    • 58 W
    • 583 W
    • 6 W
    • 60 W
    • 600 W
    • 63 W
    • 630 W
    • 65 W
    • 67 W
    • 690 W
    • 7 W
    • 7.5 W
    • 7.6 W
    • 70 W
    • 71 W
    • 720 W
    • 73 W
    • 730 W
    • 75 W
    • 750 W
    • 76 W
    • 77 W
    • 786 W
    • 79.5 W
    • 8 W
    • 8.33 W
    • 8.7 W
    • 8.75 W
    • 80 W
    • 87 W
    • 87.5 W
    • 875 W
    • 88 W
    • 88.8 W
    • 880 W
    • 9 W
    • 9.2 W
    • 90 W
    • 910 W
    • 94 W
    • 940 W
    • 960 W
Maximum Collector Current (IC) (1)
    • 8 A
    • .001 A
    • .0011 A
    • .0113 A
    • .03 A
    • .05 A
    • .06 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .15 A
    • .2 A
    • .22 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .375 A
    • .4 A
    • .44 A
    • .45 A
    • .5 A
    • .54 A
    • .6 A
    • .62 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • .82 A
    • .85 A
    • .9 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.35 A
    • 1.4 A
    • 1.5 A
    • 1.59 A
    • 1.6 A
    • 1.65 A
    • 1.7 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 11 A
    • 12 A
    • 12.5 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17.5 A
    • 17.8 A
    • 18.75 A
    • 19.8 A
    • 2 A
    • 2.1 A
    • 2.25 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.67 A
    • 2.7 A
    • 2.75 A
    • 2.8 A
    • 20 A
    • 21 A
    • 21.6 A
    • 22 A
    • 24 A
    • 25 A
    • 27 A
    • 28 A
    • 3 A
    • 3.25 A
    • 3.5 A
    • 3.7 A
    • 32 A
    • 35 A
    • 36 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.8 A
    • 40 A
    • 43.2 A
    • 45 A
    • 5 A
    • 5.4 A
    • 5.5 A
    • 5.52 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.5 A
    • 6.7 A
    • 7 A
    • 7.4 A
    • 7.7 A
    • 7.8 A
    • 8.5 A
    • 9 A
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .5 V
    • 1 V
    • 1.5 V
    • 3 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.6 dB
    • 10.8 dB
    • 11 dB
    • 11.5 dB
    • 11.8 dB
    • 12 dB
    • 12.2 dB
    • 13 dB
    • 13.5 dB
    • 15 dB
    • 16 dB
    • 17 dB
    • 18 dB
    • 4 dB
    • 4.15 dB
    • 4.3 dB
    • 4.4 dB
    • 4.5 dB
    • 4.8 dB
    • 4.88 dB
    • 4.9 dB
    • 5 dB
    • 5.1 dB
    • 5.2 dB
    • 5.4 dB
    • 5.5 dB
    • 5.6 dB
    • 5.7 dB
    • 6 dB
    • 6.2 dB
    • 6.3 dB
    • 6.4 dB
    • 6.5 dB
    • 6.6 dB
    • 6.7 dB
    • 6.8 dB
    • 6.9 dB
    • 7 dB
    • 7.2 dB
    • 7.3 dB
    • 7.4 dB
    • 7.5 dB
    • 7.7 dB
    • 7.8 dB
    • 8 dB
    • 8.1 dB
    • 8.4 dB
    • 8.5 dB
    • 8.6 dB
    • 8.7 dB
    • 8.75 dB
    • 8.8 dB
    • 9 dB
    • 9.2 dB
    • 9.3 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 5
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
No. of Terminals
    • 10
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP RF Small Signal
    • Other Transistors
Maximum Power Dissipation Ambient
    • .2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 10.8 W
    • 100 W
    • 105 W
    • 11 W
    • 11.6 W
    • 116 W
    • 12 W
    • 12.5 W
    • 120 W
    • 125 W
    • 132 W
    • 133 W
    • 134 W
    • 14 W
    • 145 W
    • 15 W
    • 150 W
    • 154 W
    • 17 W
    • 175 W
    • 18 W
    • 18.6 W
    • 19.3 W
    • 2 W
    • 20 W
    • 200 W
    • 21.5 W
    • 215 W
    • 218 W
    • 220 W
    • 23 W
    • 230 W
    • 25 W
    • 250 W
    • 27 W
    • 270 W
    • 29 W
    • 290 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 32.5 W
    • 320 W
    • 340 W
    • 35 W
    • 350 W
    • 38 W
    • 40 W
    • 41 W
    • 44 W
    • 45 W
    • 46 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 57 W
    • 6 W
    • 60 W
    • 64.8 W
    • 67 W
    • 68 W
    • 7.5 W
    • 70 W
    • 77 W
    • 8 W
    • 8.5 W
    • 80 W
    • 82 W
    • 87 W
    • 9 W
    • 9.6 W
    • 90 W
    • 94 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 120
    • 15
    • 18
    • 19
    • 20
    • 25
    • 30
    • 40
    • 45
    • 5
    • 50
    • 60
    • 75
    • 8
    • 80
    • 85
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 250 Cel
Maximum Collector-Base Capacitance
    • 10 pF
    • 100 pF
    • 120 pF
    • 125 pF
    • 130 pF
    • 15 pF
    • 150 pF
    • 16 pF
    • 160 pF
    • 18 pF
    • 19 pF
    • 2.6 pF
    • 20 pF
    • 200 pF
    • 220 pF
    • 24 pF
    • 240 pF
    • 25 pF
    • 250 pF
    • 28 pF
    • 3 pF
    • 3.5 pF
    • 3.6 pF
    • 3.7 pF
    • 30 pF
    • 300 pF
    • 320 pF
    • 330 pF
    • 36 pF
    • 360 pF
    • 4.2 pF
    • 40 pF
    • 45 pF
    • 450 pF
    • 48 pF
    • 5 pF
    • 5.2 pF
    • 50 pF
    • 500 pF
    • 55 pF
    • 6 pF
    • 6.5 pF
    • 600 pF
    • 65 pF
    • 7 pF
    • 7.5 pF
    • 8 pF
    • 8.5 pF
    • 80 pF
    • 85 pF
    • 90 pF
    • 95 pF
Transistor Element Material
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 110 V
    • 12 V
    • 15 V
    • 16 V
    • 16.5 V
    • 17 V
    • 18 V
    • 19 V
    • 20 V
    • 22 V
    • 24 V
    • 25 V
    • 250 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 35 V
    • 36 V
    • 40 V
    • 400 V
    • 45 V
    • 53 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7.2 V
    • 70 V
    • 75 V
    • 8 V
Minimum Operating Temperature
    • -55 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn) - annealed
    • NICKEL
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • Tin (Sn)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRFM-F4
    • O-CRFM-F6
    • O-CRMW-F4
    • O-CRPM-F2
    • O-CRPM-F4
    • O-CUPM-P3
    • O-CXFM-F4
    • O-CXFM-F6
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBFM-P3
    • O-MRDB-F4
    • O-MUPM-P3
    • O-MUPM-W3
    • O-PDFM-F2
    • O-PRDB-F4
    • O-PRFM-F2
    • O-PRFM-F4
    • O-PRPM-F4
    • O-PXFM-F6
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFP-F16
    • R-CDFP-F2
    • R-CDFP-F6
    • R-CDMW-F2
    • R-CDSO-G8
    • R-CQCC-N3
    • R-MDFM-F2
    • R-MDFM-F4
    • R-MDFM-F6
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDIP-T14
    • R-PDSO-G10
    • R-PDSO-G14
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-XRPM-F4
    • R-XUUC-N16
    • R-XUUC-N5
    • S-CDFM-F2
    • S-CQMW-F4
    • S-PDFM-F2
    • S-PDPM-F4
    • X-PXPM-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • DIFFUSED EMITTER BALLAST RESISTOR
    • DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, HIGH VOLTAGE
    • HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
    • HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
    • LOW NOISE
    • WITH EMITTER BALLASTING RESISTORS
JEDEC-95 Code
    • TO-117
    • TO-126
    • TO-220AB
    • TO-251
    • TO-33
    • TO-39
    • TO-60
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 235
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • MIL-38535; RH - 100K Rad(Si)
    • MIL-38535; RH - 300K Rad(Si)
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

1214-55

Microsemi

NPN

SINGLE

YES

8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

HIGH RELIABILITY

e0

1214-110M

Microsemi

NPN

SINGLE

YES

270 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

BIP RF Small Signal

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

BASE

Not Qualified

e0

MRF240A

Motorola

NPN

SINGLE

NO

100 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

150 Cel

125 pF

SILICON

16 V

RADIAL

O-CRFM-F4

Not Qualified

SD1455

STMicroelectronics

NPN

SINGLE

NO

140 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10

175 Cel

85 pF

SILICON

35 V

GOLD

RADIAL

O-PRPM-F4

Not Qualified

DIFFUSED EMITTER BALLAST RESISTOR

e4

SD1488

STMicroelectronics

NPN

SINGLE

YES

145 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

150 Cel

SILICON

16 V

GOLD

UNSPECIFIED

O-PXFM-F6

Not Qualified

DIFFUSED EMITTER BALLAST RESISTOR

e4

SD1274-01

STMicroelectronics

NPN

SINGLE

NO

175 MHz

70 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

20

200 Cel

SILICON

16 V

RADIAL

O-PRFM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

AM1011-070

STMicroelectronics

NPN

SINGLE

YES

200 W

8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

6.7 dB

FLAT

SQUARE

1

L BAND

2

FLANGE MOUNT

Other Transistors

20

250 Cel

SILICON

DUAL

S-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

SD1274

STMicroelectronics

NPN

SINGLE

NO

175 MHz

70 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

20

200 Cel

SILICON

16 V

RADIAL

O-PRPM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

AM83135-050

STMicroelectronics

NPN

SINGLE

YES

312 W

8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

250 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

SD1275-01

STMicroelectronics

NPN

SINGLE

NO

160 MHz

70 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

20

200 Cel

SILICON

16 V

RADIAL

O-PRFM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SD1275

STMicroelectronics

NPN

SINGLE

NO

70 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

20

200 Cel

SILICON

16 V

GOLD

RADIAL

O-PRPM-F4

Not Qualified

e4

AM80912-085

STMicroelectronics

NPN

SINGLE

YES

300 W

8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

7.5 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

20

250 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

SD1490

STMicroelectronics

NPN

SINGLE

YES

135 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

200 Cel

80 pF

SILICON

30 V

NICKEL

DUAL

R-PDFM-F4

EMITTER

Not Qualified

HIGH EFFICIENCY

AM82731-050

STMicroelectronics

NPN

SINGLE

YES

167 W

8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

6 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

30

250 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

SD4600

STMicroelectronics

NPN

SINGLE

YES

146 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

25

200 Cel

SILICON

28 V

NICKEL

DUAL

R-PDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY

SD1489

STMicroelectronics

NPN

SINGLE

YES

175 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

200 Cel

SILICON

30 V

DUAL

R-PDFM-F4

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

AM83135-040

STMicroelectronics

NPN

SINGLE

YES

167 W

8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

5.1 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

30

250 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

BLV13

NXP Semiconductors

NPN

SINGLE

NO

1650 MHz

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

15

200 Cel

SILICON

16.5 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

MRF20060RS

NXP Semiconductors

NPN

SINGLE

YES

250 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLATPACK

Other Transistors

20

200 Cel

SILICON

25 V

Tin/Lead (Sn/Pb)

DUAL

R-CDFP-F2

EMITTER

Not Qualified

e0

BLU60/28

NXP Semiconductors

NPN

SINGLE

YES

110 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

20

200 Cel

SILICON

32 V

UNSPECIFIED

O-CXFM-F6

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BLS3135-65

NXP Semiconductors

NPN

SINGLE

YES

200 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

40

200 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

BLW40

NXP Semiconductors

NPN

SINGLE

YES

1650 MHz

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

DISK BUTTON

15

200 Cel

SILICON

16.5 V

RADIAL

O-CRDB-F4

Not Qualified

BLY90

NXP Semiconductors

NPN

SINGLE

YES

8 A

PLASTIC/EPOXY

AMPLIFIER

5 dB

FLAT

SQUARE

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

200 Cel

SILICON

18 V

DUAL

S-PDPM-F4

ISOLATED

Not Qualified

BLW60

NXP Semiconductors

NPN

SINGLE

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

5 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

SILICON

18 V

RADIAL

O-PRPM-F4

ISOLATED

Not Qualified

MRF20060R

NXP Semiconductors

NPN

SINGLE

YES

250 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

20

200 Cel

SILICON

25 V

Tin/Lead (Sn/Pb)

DUAL

R-CDFM-F2

EMITTER

Not Qualified

e0

BLW76

NXP Semiconductors

NPN

SINGLE

NO

315 MHz

140 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

35 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

PTB20134

Infineon Technologies

NPN

YES

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

SILICON

25 V

MATTE TIN

DUAL

R-CDFM-F6

EMITTER

Not Qualified

HIGH RELIABILITY

e3

2SC2783

Toshiba

NPN

SINGLE

YES

150 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.88 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

150 W

10

175 Cel

150 pF

SILICON

16 V

UNSPECIFIED

O-CXFM-F6

Not Qualified

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.