STMicroelectronics - AM1011-070

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .8 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; No. of Elements: 1;

STMicroelectronics' AM1517-025 is an NPN BJT transistor with 8.5 dB min power gain, ideal for amplifier applications in L Band frequencies. It has a max power dissipation of 45 W and can handle up to 2.5 A collector current, making it suitable for high-power RF amplification needs. The package is ceramic-metal sealed co-fired with a square shape and flange mount style for efficient heat dissipation.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; JESD-609 Code: e3;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .4 A; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: C BAND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): .25 A; Transistor Element Material: SILICON;

BLY88A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 2.5 A, operates up to 200 °C, and offers a min power gain of 7.5 dB in the very high frequency band. Its round, flat package ensures efficient performance in various electronic devices.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 340 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: O-CRFM-F4;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .3 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 825 MHz; Maximum Collector Current (IC): 2.75 A; Minimum DC Current Gain (hFE): 10;

SD1455 by STMicroelectronics is a NPN RF Power BJT with 140W power dissipation, suitable for amplifier applications in the VHF band. Featuring a max collector-emitter voltage of 35V and a max collector current of 8A, it operates at temperatures up to 175 °C.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 1.2 A; Maximum Operating Temperature: 175 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 6 A; Highest Frequency Band: L BAND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

BLW89 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications, featuring a max power dissipation of 9.6 W and a nominal transition frequency of 850 MHz. It operates in the ultra-high frequency band with a min power gain of 12 dB. Encased in a ceramic, metal-sealed package, it ensures reliability up to 200 °C.

STMicroelectronics' AM2931-125 is a NPN RF BJT transistor with 500W power dissipation, ideal for S Band applications. Featuring a single configuration and 16A max collector current, it operates up to 250 °C in a ceramic-metal package suitable for switching purposes.

NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Case Connection: BASE; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 20 V;