NXP Semiconductors - BLF182XR

  1. Home
  2. NXP Semiconductors - BLF182XR
BLF182XR by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF182XR
Description RF Power Bipolar Transistors;
Datasheet BLF182XR Datasheet
In Stock4,203
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,203 - -

Popular Products

Category Top Products

2SC2783 by Toshiba

2SC2783

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 8 A; JESD-30 Code: O-CXFM-F6;
MSC81250M by STMicroelectronics

MSC81250M

STMicroelectronics

STMicroelectronics' MSC81250M is a NPN RF BJT transistor with 600W power dissipation, ideal for L Band switching applications. Featuring a single configuration, it has a max collector current of 17.8A and operates at up to 200 °C temperature.
2SC3006 by Toshiba

2SC3006

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): 1 A; Transistor Application: AMPLIFIER;
933582620112 by NXP Semiconductors

933582620112

NXP Semiconductors

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): 2 A; No. of Terminals: 8;
2SC2391 by Toshiba

2SC2391

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: RADIAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
SD1414-12 by STMicroelectronics

SD1414-12

STMicroelectronics

SD1414-12 by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 150W, operates at up to 200 °C, and supports ultra-high frequency bands. Its flat terminal design allows for easy surface mounting.
SD1135 by STMicroelectronics

SD1135

STMicroelectronics

SD1135 by STMicroelectronics is a NPN RF BJT transistor with 4 terminals, operating in the ultra-high frequency band up to 470 MHz. It has a max power dissipation of 15W and can handle a collector current of 2A. Ideal for amplifier applications, this transistor offers a min DC current gain of 20 and operates at temperatures up to 175 °C.
MAPRST0912-50 by Tyco Electronics M/a-com

MAPRST0912-50

Tyco Electronics M/a-com

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;
LXE16350XTRAY by NXP Semiconductors

LXE16350XTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .3 A; Terminal Position: DUAL; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
AM83135-015 by STMicroelectronics

AM83135-015

STMicroelectronics

STMicroelectronics AM83135-015 is a NPN RF BJT transistor with 5.2 dB min power gain, ideal for S Band applications. It has a max power dissipation of 71W, operates at up to 250 °C, and supports switching functions in a flange mount package.
2SC4605 by Toshiba

2SC4605

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .5 A;
PTB42002X by NXP Semiconductors

PTB42002X

NXP Semiconductors

PTB42002X by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 10W, operates in the C band, and supports a max temp of 200 °C. Its ceramic-metal sealed package ensures durability in demanding environments.
AM83135-040 by STMicroelectronics

AM83135-040

STMicroelectronics

STMicroelectronics' AM83135-040 is an NPN RF BJT with 5.1 dB min power gain, suitable for S Band applications. It has a max power dissipation of 167W, operating up to 250 °C, and can handle a max collector current of 8A.
2SC2510 by Toshiba

2SC2510

Toshiba

Toshiba's 2SC2510 is an NPN RF Power BJT with a single configuration for amplifier applications. It offers a min power gain of 12.2 dB, max power dissipation of 250 W, and operates in the high-frequency band up to 175°C.
BDP950H6327XTSA1 by Infineon Technologies

BDP950H6327XTSA1

Infineon Technologies

Infineon's BDP950H6327XTSA1 is a PNP RF Power BJT with 60V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mount assembly.
SD4600 by STMicroelectronics

SD4600

STMicroelectronics

SD4600 by STMicroelectronics is a NPN RF Power BJT with 4 terminals, suitable for amplifier applications in the UHF band. It has a max power dissipation of 146W, max collector current of 8A, and operates up to 200 °C. The package is plastic/epoxy with flat terminals and nickel finish.
LXE18300X by NXP Semiconductors

LXE18300X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; No. of Terminals: 2; Case Connection: EMITTER;
2SC3597E by Onsemi

2SC3597E

Onsemi

Onsemi's 2SC3597E is an NPN RF Power BJT with a max. collector-emitter voltage of 60V and max. collector current of 0.5A. Ideal for switching applications, it has a nominal transition frequency of 800MHz. Package style is flange mount with through-hole terminals in a rectangular shape.
MZ0912B50YTRAY by NXP Semiconductors

MZ0912B50YTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; JESD-30 Code: R-CDFM-F2; Maximum Collector-Emitter Voltage: 20 V;
LAE4001R by NXP Semiconductors

LAE4001R

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .08 A; Transistor Application: AMPLIFIER; JESD-30 Code: O-CRMW-F4;