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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLT52T/R |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Package Shape: RECTANGULAR; Maximum Power Dissipation Ambient: 23 W; |
| Datasheet | BLT52T/R Datasheet |
| In Stock | 2,854 |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 8 dB |
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Collector Current (IC): | 2.5 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | NPN |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 25 |
| No. of Terminals: | 8 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 10 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-CDSO-G8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Additional Features: | HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Maximum Power Dissipation Ambient: | 23 W |
